Interconnect Dielectric UV Curing to Prevent Charge-Induced Burnout
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Solution Overview
Problem
The accumulation of electric charge on dielectric materials during the fabrication of semiconductor device structures leads to issues such as under etch and metal line/via burnout, reducing the breakdown voltage and reliability of the insulating structure.
Innovation Solution
Implementing an ultraviolet (UV) curing process to remove electric charge accumulated on dielectric materials after etching processes, using UV light with wavelengths ranging from 200 nm to 400 nm and processing temperatures from 70 to 400 degrees Celsius, without affecting the physical properties of the semiconductor device structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching processes are used to form openings in dielectric layers, then the interconnect structure can be formed, but electric charge accumulates on the dielectric materials causing under etch and metal line/via burnout
Solution Approach 1:
The patent applies UV irradiation to convert the harmful accumulated electric charge on dielectric materials into a beneficial effect by neutralizing the charge. The UV light energy causes charge carriers to recombine, eliminating the harmful electrostatic effects that lead to under etch and metal burnout, while preserving the etched structure integrity
Solution Approach 2:
The patent introduces a new process parameter (UV irradiation) with specific wavelength ranges (200-400 nm) and dose parameters to change the electrical state of the dielectric material. This parameter change neutralizes the accumulated charge without affecting the physical structure, resolving the contradiction between maintaining etch precision and ensuring reliability
2Productivity
If conventional fabrication processes are used, then manufacturing steps can be completed, but breakdown voltage is reduced due to charge accumulation
Solution Approach 1:
The patent applies UV irradiation as a preliminary action between fabrication steps to prevent charge accumulation from affecting subsequent processes. By neutralizing charges early in the process flow, the method maintains both high throughput and reliable breakdown voltage characteristics in the final device
Solution Approach 2:
The UV irradiation process acts as an intermediary step that mediates between the etching/fabrication processes and the final device performance. This intermediate treatment removes harmful charges without disrupting the overall manufacturing flow, preserving both productivity and reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The UV curing process effectively removes electric charge, preventing under etch and reducing the risk of metal line/via burnout, thereby enhancing the breakdown voltage and reliability of the insulating structure.
Implementation Method 1
performing a first ultraviolet (UV) curing process to remove the electric charge accumulated on the insulating structure
Data Source
AI summary
Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming an interconnect structure over a substrate. The forming the interconnect structure over the semiconductor device structure includes forming a dielectric layer, then performing an annealing process, then forming one or more openings in the dielectric layer, then performing a first ultraviolet (UV) curing process, and then forming conductive features in the one or more openings.