Interconnect Dielectric UV Curing Against Charge Buildup
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Solution Overview
Problem
The fabrication processes of semiconductor devices and interconnect structures can lead to electric charge accumulation on dielectric materials, causing issues like under etch and reduced breakdown voltage, which affects the reliability of semiconductor devices.
Innovation Solution
An ultraviolet (UV) curing process is employed after etching and other plasma or wet processes to remove electric charge from dielectric materials, ensuring the physical properties of the semiconductor device structure are maintained without affecting the materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deposition and etching processes are performed to fabricate semiconductor devices and interconnect structures, then the devices and structures are formed, but electric charge accumulates on dielectric materials causing under etch and metal line/via burn out
Solution Approach 1:
The patent applies UV irradiation to convert the harmful accumulated electric charge on dielectric materials into a beneficial effect by neutralizing the charge. The UV light energy breaks down the trapped charges, preventing under etch and metal line burn out, thus transforming a process defect into a controlled neutralization step that improves device reliability
2Productivity
If standard fabrication processes are used, then manufacturing efficiency is maintained, but time-dependent dielectric breakdown (TDDB) occurs due to charge accumulation
Solution Approach 1:
The patent introduces a UV irradiation step performed after deposition and etching processes but before final device assembly. This preliminary action neutralizes electric charge accumulation early in the fabrication sequence, preventing subsequent TDDB issues without disrupting the overall manufacturing efficiency or requiring process resequencing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The UV curing process effectively addresses electric charge accumulation, preventing under etch and reducing time-dependent dielectric breakdown (TDDB), thereby enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
An ultraviolet (UV) curing process is employed after etching and other plasma or wet processes to remove electric charge from dielectric materials
Data Source
AI summary
Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming an interconnect structure over a substrate. The forming the interconnect structure over the semiconductor device structure includes forming a dielectric layer, then performing an annealing process, then forming one or more openings in the dielectric layer, then performing a first ultraviolet (UV) curing process, and then forming conductive features in the one or more openings.