Interconnect and Via Layout for Contact Plug Step Stability
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Solution Overview
Problem
As semiconductor devices trend towards higher integration density and smaller transistor sizes, ensuring electrical stability and reliability becomes a challenge due to the increased complexity and potential degradation from step differences in contact plug surfaces.
Innovation Solution
The semiconductor device incorporates a design with aligned side surfaces of interconnection lines, vias, and barrier layers, along with an interlayer insulating layer to address the step differences between contact plugs, enhancing electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased and transistor size is reduced, then productivity and performance are improved, but electrical stability and reliability deteriorate due to step differences in contact plug surfaces
Solution Approach 1:
The patent introduces a new dimensional approach by forming an interlayer insulating layer that fills the step difference between contact plugs at different heights. This third-dimensional filling approach compensates for the surface level differences caused by high integration density, thereby maintaining electrical stability without sacrificing productivity.
Solution Approach 2:
The interlayer insulating layer acts as an intermediary substance that mediates between the contact plugs at different vertical levels. By introducing this intermediate layer, the patent enables reliable electrical connections between structures at different heights, resolving the reliability issue caused by step differences while maintaining high integration density.
2Adaptability or versatility
If contact plugs are formed at different vertical levels to accommodate varying heights, then adaptability is improved, but manufacturing precision deteriorates due to alignment difficulties
Solution Approach 1:
The patent applies local quality by forming the interlayer insulating layer specifically in the regions where step differences exist between contact plugs. This localized approach allows different parts of the structure to have different properties - the insulating layer is present where needed to fill step differences, while other regions maintain their original characteristics, thereby achieving both adaptability and manufacturing precision.
3Adaptability or versatility
If barrier layers and interconnection lines are formed with different thicknesses to accommodate step differences, then adaptability is improved, but device complexity increases
Solution Approach 1:
The patent merges the barrier layer and interlayer insulating layer into a unified structure. By combining these layers and forming them in an integrated manner, the patent reduces the overall device complexity while still accommodating the thickness variations needed to handle step differences between contact plugs at different vertical levels.
Data Source
AI summary
A semiconductor device includes an interconnection line including a first portion and a second portion; a via on the first portion of the interconnection line; a conductive barrier layer between a lower surface of the via and an upper surface of the first portion of the interconnection line; and an interlayer insulating layer in contact with side surfaces of the interconnection line, the via, and the conductive barrier layer and covering the second portion of the interconnection line