Interconnect Wire Sealant Structure for Stronger Power Modules

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Solution Overview

Problem

Conventional power semiconductor devices face issues with the mechanical strength of interconnect wires due to their coverage with thin sealants like silicone resin, leading to potential breaks.

Innovation Solution

A power semiconductor device design that includes a first sealant covering the interconnect wires in a shape following their upper portion, filled between adjacent wires, with specific thermal and elastic properties to enhance mechanical strength, and optionally a second sealant to increase insulation distance and dielectric withstanding voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If interconnect wires are covered with a thin sealant such as silicone resin, then the wiring structure is sealed and protected, but the mechanical strength of the interconnect wires remains weak causing breakage

Engineering Contradiction:
Improveprotection of wiring structureVSAvoidmechanical strength of interconnect wires
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent uses a dual-sealant composite structure where a first sealant (e.g., epoxy resin) with high mechanical strength covers the upper portion of interconnect wires, while a second sealant (e.g., silicone resin) provides sealing and flexibility. This composite material approach combines the advantages of both materials to simultaneously improve mechanical strength and sealing protection.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies different sealant materials to different regions of the wiring structure. The first sealant is specifically applied to cover the upper portion of interconnect wires where mechanical strength is needed, while the second sealant is used for overall sealing and insulation. This localized application optimizes the functional properties in different areas.

Inventive Principle:
Principle #3Local quality

2Strength

If a thick sealant is used to cover interconnect wires to increase mechanical strength, then the strength improves, but the weight of the device increases

Engineering Contradiction:
Improvemechanical strength of interconnect wiresVSAvoidweight of power semiconductor device
Core Design Contradiction:
StrengthVSWeight of moving object

Solution Approach 1:

The patent employs a composite sealant system where the first sealant provides mechanical strength with minimal thickness, and the second sealant provides additional protection. This combination allows achieving the required strength without using excessive material that would increase weight.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the thickness and material properties of the sealants to achieve the minimum required mechanical strength. By carefully controlling the parameters of the sealant layers (thickness, material composition), the design achieves strength requirements while minimizing weight addition.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If interconnect wires are covered with sealant to protect them, then mechanical protection is provided, but thermal stress and internal stress may cause breaks

Engineering Contradiction:
Improveprotection of interconnect wiresVSAvoidthermal stress and internal stress
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent uses a composite sealant structure where the first sealant has mechanical strength to protect wires, and the second sealant has flexibility and thermal stability to accommodate thermal expansion and reduce stress concentration. This composite approach mitigates the harmful effects of thermal and internal stresses.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent designs the sealant structure to anticipate and cushion against thermal and internal stresses before they cause damage. The flexible second sealant acts as a stress-absorbing layer that prevents stress concentration at critical points, thereby preventing breaks before they occur.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

4Device complexity

If a single sealant layer is used to cover interconnect wires, then the structure is simple, but the insulation distance and dielectric withstanding voltage are insufficient

Engineering Contradiction:
Improvestructure of sealant layersVSAvoidinsulation distance and dielectric withstanding voltage
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent employs a multi-layer composite sealant structure where each layer serves a specific function. The first sealant provides mechanical strength and partial insulation, while the second sealant adds insulation distance and dielectric strength. This layered composite structure achieves superior electrical insulation without excessive complexity.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent increases insulation distance by adding a vertical dimension with multiple sealant layers rather than relying solely on horizontal spacing. This multi-layer approach effectively increases the dielectric path length and withstanding voltage capability while maintaining a compact overall structure.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250349560A1Power semiconductor device and method of manufacturing power semiconductor device
Publication Date: 2025.11.13 MITSUBISHI ELECTRIC CORP
  • US20250349560A1 patent drawing
  • US20250349560A1 patent drawing
  • US20250349560A1 patent drawing

AI summary

An object is to provide a technology that can increase the mechanical strength of interconnect wires using a sealant. A power semiconductor device includes: a plurality of interconnect wires establishing at least one connection between semiconductor elements, between metal circuit patterns, or between a semiconductor element and a metal circuit pattern, the interconnect wires extending along each other; and a first sealant sealing the semiconductor elements at a height lower than the maximum height of the interconnect wires on the semiconductor elements, the first sealant covering an upper portion of the interconnect wires in a shape following a shape of the upper portion to be filled between the adjacent interconnect wires.