Wiring structure with conductive features having different critical dimensions, and method of manufacturing the same
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Solution Overview
Problem
In semiconductor manufacturing, existing technologies face challenges in effectively controlling the effective resistance of metal interconnections during the back-end-of-line processes due to variations in critical dimensions of conductive features, which affect the connectivity and performance of semiconductor devices.
Innovation Solution
A wiring structure and manufacturing method involving conductive features with different critical dimensions, where a first conductive feature with a specific dimension is surrounded by a diffusion barrier liner, and a second conductive feature with a smaller dimension is enclosed by an insulative liner, allowing for precise control of resistance through the thickness of the insulative liner, and the use of multiple metallic and dielectric layers to optimize interconnections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive features with varying critical dimensions are used in metal interconnections, then connectivity and performance are improved, but effective resistance control becomes difficult
Solution Approach 1:
The patent applies different liner types (diffusion barrier liner vs. insulative liner) to different conductive features based on their critical dimensions. Conductive features with larger critical dimensions use diffusion barrier liners, while those with smaller critical dimensions use insulative liners. This local differentiation allows precise control of effective resistance for each conductive feature, resolving the contradiction between improved connectivity and difficult resistance control.
2Ease of manufacture
If a single liner type is used for all conductive features, then manufacturing process is simplified, but resistance control precision deteriorates
Solution Approach 1:
The patent implements a selective liner formation process where diffusion barrier liners are formed for first conductive features and insulative liners are formed for second conductive features based on their respective critical dimensions. This approach maintains manufacturing simplicity through standardized processes while achieving precise resistance control through material selection, resolving the contradiction between ease of manufacture and resistance control precision.
3Productivity
If conductive features with smaller critical dimensions are used, then wiring density is increased, but resistance control becomes less precise
Solution Approach 1:
The patent changes the liner material parameter based on the critical dimension parameter of conductive features. For smaller critical dimensions (second conductive features), insulative liners are used to maintain precise resistance control. For larger critical dimensions (first conductive features), diffusion barrier liners are used. This parameter-based selection enables both high wiring density and precise resistance control, resolving the contradiction between productivity and manufacturing precision.
Data Source
AI summary
The present application provides a wiring structure, a semiconductor device having the wiring structure, and a method of manufacturing the semiconductor device. The wiring structure includes a substrate, a metallic layer above the substrate, at least one first conductive feature and at least one second conductive feature. The first and second conductive features are disposed between the substrate and the metallic layer; the first conductive feature has a first critical dimension, and the second conductive feature has a second critical dimension less than the first critical dimension. An effective resistance of the wiring structure can be adjusted by changing the critical dimensions of the first and second conductive features. The semiconductor device including the wiring structure and a method of manufacturing the semiconductor device are also provided.