Interconnection Air-Gap Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
As semiconductor structures miniaturize, the decreasing distance between adjacent metal wires in interconnection layers leads to parasitic capacitance, causing signal delay and reducing performance.
Innovation Solution
An interconnection structure is designed with a dielectric layer and an insulation layer that includes an extension portion extending into a recess between adjacent wires, creating an air gap between the insulation layer and the substrate, which reduces parasitic capacitance by utilizing the lower dielectric constant of air.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between adjacent metal wires is decreased to achieve miniaturization, then the integration density is improved, but parasitic capacitance increases causing signal delay
Solution Approach 1:
The patent introduces an air gap as an intermediary medium between adjacent metal wires. This air gap acts as a mediator that reduces the parasitic capacitance coupling between wires while maintaining their close proximity for high integration density. The air gap serves as a beneficial intermediate structure that resolves the contradiction between miniaturization and signal integrity.
Solution Approach 2:
The patent applies local quality by creating a non-uniform dielectric structure where air gaps are strategically positioned between adjacent wires in specific regions. Instead of uniformly reducing wire distance everywhere, the air gaps are localized in critical areas where parasitic capacitance has the greatest impact on signal delay, allowing miniaturization in non-critical regions while maintaining signal integrity in critical regions.
2Quantity of substance
If the distance between adjacent metal wires is decreased, then the interconnection layer density is improved, but parasitic capacitance between wires increases
Solution Approach 1:
The air gap serves as an intermediary dielectric structure positioned between adjacent metal wires. This intermediate air region reduces the parasitic capacitance coupling effect while allowing the wires to maintain high density arrangement. The air gap mediates the electrical interaction between adjacent wires, reducing harmful capacitive coupling.
Solution Approach 2:
The patent changes the dielectric parameter (permittivity) in the region between adjacent wires by introducing air gaps. Since air has a lower permittivity compared to conventional dielectric materials, this parameter change reduces the parasitic capacitance between wires while maintaining the high wire density required for advanced technology nodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces signal delay and improves the performance of semiconductor structures by minimizing parasitic capacitance between adjacent wires.
Implementation Method 1
Parasitic capacitance that is formed between adjacent metal wires can cause signal delay, and weaken the performance of the semiconductor structures consequently
Implementation Method 2
creating an air gap between the insulation layer and the substrate, which reduces parasitic capacitance by utilizing the lower dielectric constant of air
Data Source
AI summary
The present disclosure provides an interconnection structure and a manufacturing method thereof and a semiconductor structure, and relates to the technical field of semiconductors. The interconnection structure includes a substrate, a dielectric layer arranged on the substrate and an insulation layer, wherein a plurality of wires are arranged in the dielectric layer at intervals; a recess is arranged in a portion, between adjacent wires, of the dielectric layer, and a bottom of the recess exposes a surface of the substrate; and the insulation layer includes an extension portion extending into the recess, and a gap is arranged between the extension portion and the substrate.