Interconnection Structure With Local Dielectric Pattern for TDDB
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Solution Overview
Problem
The increasing miniaturization of electronic devices leads to reduced distances between metal lines with different voltages, resulting in insufficient time dependent dielectric breakdown (TDDB) that fails to meet current or future requirements.
Innovation Solution
An interconnection structure is designed with a dielectric pattern in the second insulation layer where first and second conductive lines cross, using a dielectric material with a higher dielectric constant than the insulation layer, and optionally including an etch stop and cap layers, to enhance TDDB without requiring additional conductive or insulation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between adjacent metal lines is reduced to achieve miniaturization, then device density increases, but time dependent dielectric breakdown (TDDB) performance deteriorates
Solution Approach 1:
The patent applies local quality by introducing a dielectric pattern with different dielectric constant at the specific crossing region where metal lines intersect. This localized modification of dielectric properties enhances TDDB performance at the critical crossing point without affecting the overall miniaturization of the interconnection structure. The dielectric pattern is positioned only where needed (at crossing points) rather than uniformly across the entire structure.
2Reliability
If additional insulation layers are added to improve TDDB performance, then reliability improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the dielectric pattern formation with the existing interconnection layer structure. The dielectric pattern is integrated into the second insulation layer rather than being implemented as a separate additional layer. This combining approach enhances TDDB performance while avoiding the complexity and manufacturing challenges associated with adding extra insulation layers to the interconnection structure.
3Reliability
If additional insulation layers are added to improve TDDB performance, then reliability improves, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process merges the formation of the dielectric pattern with the existing interconnection layer fabrication steps. The dielectric pattern is formed within the second insulation layer using the same patterning and deposition processes already established for the interconnection structure, thereby improving TDDB performance without increasing manufacturing process complexity or requiring additional fabrication steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves improved TDDB performance by positioning the dielectric pattern at the crossing point of conductive lines, maintaining electrical integrity without adding extra layers, thus addressing the TDDB issue effectively.
Implementation Method 1
a dielectric constant of the dielectric pattern is greater than a dielectric constant of the second insulation layer
Data Source
AI summary
Provided are an interconnection structure and a method for forming the same. The interconnection structure includes a first conductive line embedded in a first insulation layer, a second conductive line above the first conductive line, a second insulation layer disposed between the first conductive line and the second conductive line, and a dielectric pattern. The first conductive line extends in a first direction, and the second conductive line extends in a second direction crossing the first direction. The dielectric pattern is disposed in a portion of the second insulation layer where the first conductive line and the second conductive line cross each other in a top view.