Interconnection Structure Geometry for Stable Chip Wiring
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Solution Overview
Problem
Semiconductor chips with increasing functionality and reduced size face challenges in maintaining structural stability and preventing electrical connections due to pattern abnormalities and shrinkage of dielectric layers.
Innovation Solution
An interconnection structure comprising multiple dielectric and conductive patterns with specific geometric configurations, including penetration, intervention, and connection parts, to enhance structural stability and prevent electrical connections, while minimizing shrinkage and delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor chips are reduced in size and functions are integrated, then productivity and functionality are improved, but structural stability deteriorates due to increased density of input/output pads on a small area
Solution Approach 1:
The wiring pattern is divided into three distinct segments: a penetration part extending into the first dielectric layer, an intervention part located in the second dielectric layer, and a connection part providing electrical connection. This segmentation allows each part to be optimized for its specific function, improving overall structural stability while maintaining high functionality integration.
Solution Approach 2:
The wiring pattern transitions from a two-dimensional planar structure to a three-dimensional structure by extending vertically into the first dielectric layer through the penetration part. This dimensional change increases the effective area for electrical connection without increasing the chip's planar footprint, thereby maintaining structural stability while enabling high functionality integration.
2Productivity
If dielectric layers are shrunk to reduce chip size, then productivity is improved, but reliability deteriorates due to pattern abnormalities and electrical connection failures
Solution Approach 1:
Different regions of the wiring pattern are given different geometric properties: the penetration part has a specific angle with the bottom surface of the first dielectric layer, the intervention part has a controlled width, and the connection part has a specific angle with the top surface of the intervention part. These localized quality variations ensure reliable electrical connection while accommodating reduced dielectric layer dimensions.
Solution Approach 2:
The angles and dimensions of the wiring pattern segments are carefully controlled: the angle between the sidewall of the penetration part and the bottom surface of the first dielectric layer, the width of the intervention part, and the angle between the sidewall of the connection part and the top surface of the intervention part. These parameter changes maintain electrical connection reliability even when dielectric layers are shrunk for chip size reduction.
3Reliability
If wiring patterns are designed with complex geometric configurations, then reliability is improved, but device complexity increases
Solution Approach 1:
The complex wiring pattern is segmented into three distinct parts (penetration, intervention, and connection parts), each with a specific geometric configuration. This segmentation makes the complex structure more manageable and manufacturable by defining clear boundaries and functions for each segment, thereby improving reliability without making the device overly complex.
Data Source
AI summary
An interconnection structure includes a first dielectric layer, a second dielectric layer, first wiring patterns, and a first conductive pattern. The first wiring patterns respectively include a first penetration part that extends into a surface of the first dielectric layer, a first intervention part on the first penetration part and in the second dielectric layer, and a first connection part on the first intervention part and in the second dielectric layer. A top surface of the first intervention part is at a same level as a top surface of the first conductive pattern relative to the surface of the first dielectric layer. An angle between a sidewall of the first connection part and the top surface of the first intervention part is greater than that between a sidewall of the first penetration part and a bottom surface of the first dielectric layer.