Interconnection Structure With U-Shaped High-k Layer for HV Breakdown

The patent applies local quality by forming a high-k dielectric layer specifically in the high-voltage device region rather than uniformly across the entire semiconductor structure. This localized approach thickens the dielectric layer only where high voltage withstand capability is needed, avoiding the need for additional multi-layer interconnection structures throughout the entire device, thereby improving voltage tolerance without proportionally increasing manufacturing complexity and cost.

The patent changes the dielectric parameter by introducing a high-k dielectric material with higher permittivity than conventional dielectric layers. This parameter change allows the dielectric layer to achieve higher voltage withstand capability and improved TDDB tolerance without increasing the physical thickness through additional layers, thus resolving the contradiction between reliability improvement and device complexity reduction.

The high-k dielectric layer is formed locally in the high-voltage device region using targeted deposition and etching processes. This localized formation approach reduces manufacturing time compared to forming additional multi-layer interconnection structures across the entire semiconductor device, as it avoids repetitive deposition and patterning steps for multiple metal and dielectric layers throughout the structure.

By changing the dielectric material parameter to high-k material, the patent achieves improved TDDB tolerance without requiring additional dielectric layers. This parameter-based solution reduces the number of deposition and patterning cycles needed, thereby decreasing manufacturing time while maintaining enhanced reliability.

The patent reduces manufacturing cost by forming the high-k dielectric layer locally only in high-voltage device regions rather than adding multi-layer interconnection structures across the entire semiconductor device. This localized approach minimizes the number of deposition, patterning, and etching steps required, thereby reducing manufacturing cost while still meeting the voltage withstand capability requirements.

By utilizing high-k dielectric material parameter changes, the patent achieves the required voltage withstand capability without adding multiple dielectric and metal layers. This reduces the total number of fabrication steps, material deposition cycles, and associated costs, making the manufacturing process more cost-effective compared to forming additional multi-layer interconnection structures.