Interconnection Structure via Partial Anodization and Metal Pattern Merging
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Solution Overview
Problem
Traditional display manufacturing processes are complex and costly, with a need for reduced steps to enhance efficiency and lower costs, especially with the emergence of new display technologies like micro LED, mini LED, and quantum dot LED displays.
Innovation Solution
A method of manufacturing an interconnection structure involves forming patterned photoresists on a bottom metal layer with an aluminum atomic ratio greater than 80%, etching the metal layer, anodizing it, and depositing conductive layers to create upper and lower metal patterns that are electrically isolated and fully cover the anodized bottom metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If traditional display manufacturing processes are used, then manufacturing reliability is maintained, but process complexity and cost increase
Solution Approach 1:
The patent combines multiple manufacturing steps into a single integrated process. Specifically, the metal layer formation, patterning, and insulation steps are merged by forming the metal layer with built-in insulation characteristics through controlled oxidation, eliminating the need for separate insulation layer deposition and reducing overall process complexity while maintaining reliability
Solution Approach 2:
The metal layer is designed to serve multiple functions simultaneously: it provides both conductive pathways and insulation properties through controlled oxidation. The same metal layer forms both the interconnection structures and the insulating barriers, reducing the number of separate components and steps required in traditional manufacturing processes
2Productivity
If manufacturing steps are reduced to lower cost and enhance efficiency, then productivity improves, but manufacturing precision may deteriorate
Solution Approach 1:
The patent controls the oxidation parameters of the metal layer to achieve precise thickness and distribution of the insulating oxide layer. By adjusting oxidation time, temperature, and atmosphere composition, the process achieves high precision in forming both conductive and insulating regions from the same metal layer, maintaining manufacturing precision while reducing process steps
Solution Approach 2:
The metal layer is prepared with predetermined composition and thickness parameters before oxidation to ensure precise final dimensions. The initial metal layer is deposited with controlled stoichiometry and thickness to account for subsequent oxidation expansion, ensuring the final interconnection structures achieve target dimensions without requiring additional precision-critical steps
3Reliability
If aluminum content in bottom metal layer is increased to improve conductivity, then electrical conductivity improves, but susceptibility to oxidation increases
Solution Approach 1:
The patent creates different oxidation states in different regions of the metal layer. By controlling exposure and oxidation conditions, highly conductive regions with minimal oxidation are maintained in interconnection pathways, while oxidized insulating regions are formed in barrier areas. This local differentiation allows high aluminum content throughout while achieving both conductivity and insulation where needed
Solution Approach 2:
The metal layer is intentionally made highly susceptible to oxidation by using high aluminum content, but oxidation is applied partially and selectively rather than uniformly. Controlled oxidation is applied only to specific regions requiring insulation, while conductive regions are protected from oxidation through masking or controlled exposure, thus utilizing the oxidation susceptibility as a controllable feature rather than a defect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the number of manufacturing steps, thereby decreasing costs and improving efficiency, while also enabling the production of advanced display technologies with enhanced interconnection structures.
Implementation Method 1
A first photoresist layer is formed on the first metal layer. The first photoresist layer is exposed to UV light through a first gray tone mask to form a first patterned photoresist
Implementation Method 2
The first metal layer is anodized to form an aluminum oxide layer. In one embodiment, the first metal layer is anodized by applying a constant current greater than 0.05 mA/cm2
Implementation Method 3
The first metal layer is etched through the first patterned photoresist to form a first lower metal pattern and a second lower metal pattern respectively covered by the first and second mask portions
Implementation Method 4
a top metal layer is deposited on the aluminum oxide layer, in which the top metal layer is etched through a second patterned photoresist to form a first upper metal pattern and a second upper metal pattern
Data Source
AI summary
A method of manufacturing an interconnection structure includes: forming a first patterned photoresist on a bottom metal layer; etching the bottom metal layer to form first and second lower metal patterns; partially anodizing the etched bottom metal layer; removing the first patterned photoresist to expose a surface portion of the second lower metal pattern that is unanodized; depositing a conductive layer on the anodized bottom metal layer to be in contact with the surface portion; and etching the conductive layer through a second patterned photoresist to form a first upper conductive pattern that is above and electrically isolated from the first lower metal pattern and a second upper conductive pattern that is above the second lower metal pattern and in contact with the surface portion, in which the first and second upper conductive patterns entirely cover all non-insulated top surface of the anodized bottom metal layer.