Interlayer Dielectric Films with Segmented Carbon Ratios
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Solution Overview
Problem
The challenge in semiconductor device fabrication is to improve the dispersion and reliability of interlayer insulating films, prevent damage to these films, and reduce defects between interlayer insulating films and vias, while achieving reduced dielectric constant and increased integration and power efficiency in semiconductor chips.
Innovation Solution
A method involving the sequential formation of interlayer insulating films with varying carbon atomic ratios and bond ratios, using specific deposition processes and precursor ratios, to create a discontinuous boundary between films, thereby optimizing film properties and reducing defects during the formation of vias and metal interconnections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dielectric constant of the inter-metal dielectric layer is reduced to increase integration and decrease power consumption, then the resistive capacitance and reliability of the dielectric film improve, but the film dispersion and uniformity deteriorate
Solution Approach 1:
The inter-metal dielectric layer is segmented into multiple sub-layers (first interlayer insulating film, second interlayer insulating film, third interlayer insulating film) with different carbon atomic ratios. This segmentation allows each layer to contribute differently to the overall dielectric constant while maintaining individual layer quality and dispersion, resolving the contradiction between reduced dielectric constant and maintained film uniformity
Solution Approach 2:
Different regions of the inter-metal dielectric layer are assigned different carbon atomic ratios to optimize local properties. The first layer has lower carbon ratio for structural stability, the second layer has higher carbon ratio for lower dielectric constant, and the third layer has intermediate carbon ratio for transition and uniformity, achieving both reliability improvement and dispersion control
2Productivity
If the feature size of semiconductor devices is reduced to increase integration, then power consumption decreases, but the resistive capacitance and reliability of the dielectric film deteriorate
Solution Approach 1:
The inter-metal dielectric layer is constructed as a composite material system with three distinct layers having different carbon atomic ratios. This composite structure provides both the low dielectric constant needed for high integration and the structural reliability required for device performance, simultaneously achieving increased integration and maintained reliability
3Use of energy by stationary object
If the carbon atomic ratio is increased to reduce dielectric constant, then power consumption decreases, but the film strength and defect resistance deteriorate
Solution Approach 1:
The inter-metal dielectric layer is divided into three segments with progressively different carbon atomic ratios. The first layer maintains lower carbon ratio for structural strength, the second layer uses higher carbon ratio for reduced dielectric constant and power consumption, and the third layer provides an intermediate transition, achieving both power efficiency and structural integrity
Solution Approach 2:
The first interlayer insulating film with lower carbon ratio serves as a cushioning layer that provides structural support and prevents film collapse, while allowing the second layer with higher carbon ratio to achieve lower dielectric constant. This prior cushioning structure enables the use of higher carbon content materials without sacrificing overall film strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance and reliability of semiconductor devices by reducing dielectric constant, improving Young's modulus, and preventing kink formation, leading to more efficient and reliable interconnections.
Implementation Method 1
forming a first interlayer insulating film on a substrate using a first process for providing a carbon precursor having a first precursor ratio and oxygen (O2), forming a second interlayer insulating film on the first interlayer insulating film using a second process for providing oxygen and a carbon precursor having a second precursor ratio
Data Source
AI summary
A method of fabricating a semiconductor device is provided. The method may include forming a first interlayer insulating film on a substrate, forming a second interlayer insulating film on the first interlayer insulating film, and forming a third interlayer insulating film on the second interlayer insulating film. Different amounts of carbon may be present in each of the first, second, and third interlayer insulating films. The third interlayer insulating film may be used as a mask pattern to form a via trench that extends at least partially into the first interlayer insulating film and the second interlayer insulating film. Supplying a carbon precursor may be interrupted between the forming of the second and third interlayer insulating films, such that the second interlayer insulating film and the third interlayer insulating film may have a discontinuous boundary therebetween.