Interlayer Insulating Structure for Blocking Hydrogen Diffusion
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Solution Overview
Problem
Current semiconductor devices face challenges in maintaining high electrical characteristics and reliability due to defects caused by hydrogen diffusion through the interlayer insulating layers, leading to void formation and delamination.
Innovation Solution
Incorporating a blocking layer with low hydrogen permeability between the first and second upper interlayer insulating layers, while ensuring it is not in contact with the upper contact or interconnection lines, to prevent hydrogen from passing through and causing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a blocking layer is added between interlayer insulating layers to prevent hydrogen diffusion, then reliability is improved, but device complexity increases
Solution Approach 1:
The interlayer insulating structure is segmented into multiple layers with a dedicated blocking layer inserted between them. This blocking layer is selectively positioned to divide the hydrogen diffusion path, preventing hydrogen from reaching sensitive regions while maintaining electrical functionality.
Solution Approach 2:
A blocking layer serving as an intermediary element is introduced between the interlayer insulating layers. This blocking layer acts as a mediator that selectively blocks hydrogen diffusion while allowing the device to maintain its electrical characteristics and operational functionality.
2Object-affected harmful factors
If the blocking layer is positioned to block hydrogen diffusion paths, then hydrogen diffusion is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The blocking layer is selectively positioned at specific locations where hydrogen diffusion paths are most problematic. Rather than uniformly blocking all paths, the blocking layer is strategically placed in regions where hydrogen would otherwise reach sensitive components, optimizing the balance between hydrogen blocking and manufacturing feasibility.
3Reliability
If the blocking layer is made thick to effectively block hydrogen, then hydrogen diffusion is prevented, but electrical characteristics may deteriorate due to increased RC delay
Solution Approach 1:
The blocking layer is selectively positioned away from regions where it would create significant RC delay, such as near contact holes and interconnection lines. The blocking layer is placed in regions where hydrogen diffusion is most problematic but where its presence will have minimal impact on electrical signal transmission.
Solution Approach 2:
Rather than making the blocking layer uniformly thick throughout the entire device structure, a partial blocking approach is used where the blocking layer is strategically thickened only in regions where hydrogen diffusion is most problematic, while maintaining thinner or absent blocking in regions where electrical performance is more sensitive.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the blocking layer effectively reduces hydrogen diffusion, thereby improving the electrical characteristics and reliability of semiconductor devices by preventing void formation and delamination.
Implementation Method 1
hydrogen diffusion through the interlayer insulating layers
Data Source
AI summary
A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.