Interlayer Insulating Structure for Lower Contact Resistance
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Solution Overview
Problem
As semiconductor elements are downscaled for high integration and low power, contact resistance increases due to increased contact length, affecting element performance and reliability.
Innovation Solution
The semiconductor device incorporates a specific multilayered structure with varying thicknesses of interlayer insulating films and etching stop films, including a buffer interlayer insulating film with different thicknesses between resistance patterns and etching stop films, and uses low dielectric constant materials to reduce coupling and enhance connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the feature size of semiconductor devices is reduced to achieve high integration and low power, then integration density and power efficiency are improved, but contact resistance increases due to increased contact length
Solution Approach 1:
The interlayer insulating film is divided into a first interlayer insulating film and a second interlayer insulating film with different dielectric constants. The first interlayer insulating film has a higher dielectric constant than the second, allowing for optimized electrical performance in different regions of the device structure.
Solution Approach 2:
Different regions of the interlayer insulating structure are assigned different dielectric constant values. The first interlayer insulating film with higher dielectric constant is positioned in specific areas to provide enhanced electrical characteristics where needed, while the second interlayer insulating film with lower dielectric constant is used in other regions to minimize parasitic effects.
2Adaptability or versatility
If various contact types are used for connection between wirings to achieve flexibility in design, then design adaptability is improved, but contact length increases and contact resistance worsens
Solution Approach 1:
The patent introduces a vertical dimension to the insulating film structure by stacking first and second interlayer insulating films with different dielectric constants. This multi-layer approach provides additional degrees of freedom in optimizing electrical performance without increasing horizontal contact length.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure improves element performance and reliability by reducing contact resistance and maintaining electrical integrity, supporting high integration and low power requirements.
Implementation Method 1
the second interlayer insulating film includes a low dielectric constant material
Data Source
AI summary
A semiconductor device includes a first connection wiring in a first interlayer insulating film, an interlayer etching stop film, a buffer interlayer insulating film, a resistance pattern, a second interlayer insulating film, a wiring via disposed in the second interlayer insulating film and penetrating the buffer interlayer insulating film and the interlayer etching stop film, wherein the wiring via contacts the first connecting wiring, a resistance via disposed in the second interlayer insulating film and contacting the resistance pattern, and a second connection wiring disposed in the second interlayer insulating film and contacting the wiring via and the resistance via. A thickness of the buffer interlayer insulating film between the resistance pattern and the interlayer etching stop film is different from a thickness of the buffer interlayer insulating film through which the wiring via penetrates.