Interlayer Pattern Reduces Stress in Perpendicular Magnetic Memory
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Solution Overview
Problem
Magnetic memory devices face challenges in achieving higher reliability due to stress caused by differences in horizontal lattice constants between seed and perpendicular magnetic patterns, affecting the reliability and performance of the devices.
Innovation Solution
Incorporating an interlayer pattern with a specific crystal structure and lattice constants between the seed and perpendicular magnetic patterns to reduce stress, which includes a conductive metal nitride seed pattern, a magnetic material with an L10 structure, and a distortion of the intrinsic crystal structure of the interlayer material, optimizing the lattice constants and crystal structures to enhance device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an interlayer pattern is added between seed and perpendicular magnetic patterns, then stress is reduced and reliability is improved, but device structure becomes more complex
Solution Approach 1:
An interlayer pattern is introduced between the seed pattern and perpendicular magnetic pattern to act as a stress buffer. This intermediary layer has a horizontal lattice constant that is intermediate between the seed pattern and perpendicular magnetic pattern, reducing lattice mismatch stress and improving device reliability without fundamentally changing the MTJ operational principle.
2Reliability
If the interlayer pattern uses a distorted crystal structure, then lattice constant matching is improved and stress is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The crystal structure of the interlayer pattern is deliberately distorted from its intrinsic structure to achieve a horizontal lattice constant that is intermediate between the seed pattern and perpendicular magnetic pattern. This parameter change in crystal structure allows for better lattice matching and stress reduction, though it requires precise control during manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The interlayer pattern effectively reduces stress between the seed and perpendicular magnetic patterns, improving the reliability and performance of magnetic memory devices by aligning lattice constants and enhancing crystalline ordering, leading to improved magnetic memory device functionality.
Implementation Method 1
a horizontal lattice constant of the first crystal structure is different from a horizontal lattice constant of the first crystal structure, and the third crystal structure includes a horizontal lattice constant having a value between the horizontal lattice constant of the first crystal structure and the horizontal lattice constant of the second crystal structure
Data Source
AI summary
Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.