Redundant Interlayer Signal Lines for Soft Error Resistance

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Solution Overview

Problem

Conventional semiconductor devices with dual-redundant latch circuits face deterioration in soft error resistance due to short circuits in redundant line pairs, which cannot be detected during the inspection stage, leading to undetectable anomalies and potential operational failures.

Innovation Solution

The semiconductor device incorporates a plurality of line layers with redundant line pairs disposed in different layers, where the distance between the lines is longer than the interlayer distance, reducing the likelihood of short circuits and allowing for detectable anomalies before shipment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If redundant line pairs are placed close together in the same layer, then area is reduced and routing is simplified, but short circuit risk increases and soft error resistance deteriorates

Engineering Contradiction:
Improvelayout areaVSAvoidsoft error resistance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies dimensionality change by moving redundant line pairs from the same layer to different layers (e.g., M1 and M2 layers). This spatial separation in the vertical dimension reduces the risk of short circuits while maintaining the soft error resistance function, effectively resolving the contradiction between area efficiency and reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If redundant line pairs are placed in different layers with increased distance, then soft error resistance is improved and short circuit risk is reduced, but area increases and routing complexity increases

Engineering Contradiction:
Improvesoft error resistanceVSAvoidlayout area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent utilizes vertical layering to separate redundant line pairs, achieving reliable soft error resistance without excessive area penalty. By leveraging the third dimension (layer depth), the design maintains compact horizontal footprint while ensuring adequate separation distance for reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Difficulty of detecting and measuring

If redundant line pairs are placed in different layers with increased distance, then short circuit detection capability is improved, but routing complexity increases

Engineering Contradiction:
Improveshort circuit detectabilityVSAvoidrouting complexity
Core Design Contradiction:
Difficulty of detecting and measuringVSDevice complexity

Solution Approach 1:

The patent simplifies short circuit detection by placing redundant line pairs in different layers where they can be independently inspected. The vertical separation makes it easier to identify and isolate potential short circuits during testing, reducing detection difficulty without requiring complex routing patterns.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11949413B2Semiconductor device
Publication Date: 2024.04.02 NUVOTON TECH CORP JAPAN
  • US11949413B2 patent drawing
  • US11949413B2 patent drawing
  • US11949413B2 patent drawing

AI summary

A semiconductor device according to an aspect of the present disclosure includes: a plurality of line layers; a first line; and a second line that is not connected to the first line and is redundantly provided to transfer a signal having a level same as a level of a signal transferred through the first line. The first line and the second line are included in different layers out of the plurality of line layers, and a distance between the first line and the second line is longer than an interlayer distance between line layers next to each other out of the plurality of line layers.