Interleaved FET Finger Layout for Stronger Body Voltage Control
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Solution Overview
Problem
Field-effect transistors (FETs) with traditional body contacts face challenges in maintaining strong voltage control across the device, leading to weakened influence at locations far away from the contact, which affects performance in radio-frequency (RF) applications.
Innovation Solution
The implementation of a field-effect transistor (FET) design with multiple assemblies of source, gate, and drain on active regions, along with strategically positioned body contacts that form a T-shaped or H-shaped configuration, enhancing voltage control by distributing influence more evenly across the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional body contacts are used in FETs, then the structure is simple, but the voltage control influence weakens at locations far from the contact
Solution Approach 1:
The body contact is segmented into multiple regions (first body contact region and second body contact region) positioned at different locations within the FET structure. This segmentation allows voltage control influence to be distributed across multiple zones, ensuring strong control throughout the device rather than just near a single contact point.
Solution Approach 2:
Different body contact regions are positioned to provide optimized local control in different areas of the FET. The first body contact region is positioned to control one area while the second body contact region controls another area, ensuring uniform voltage control influence across the entire device structure.
2Reliability
If additional body contacts are added to improve voltage control, then control influence is strengthened, but the device area increases
Solution Approach 1:
The body contact structure transitions from a single-point contact to a multi-region contact distributed across different spatial dimensions within the FET. By positioning body contact regions at different locations (first and second body contact regions), the solution achieves enhanced control without proportionally increasing the overall device footprint, as the contacts are integrated within the existing device geometry.
3Reliability
If body contacts are positioned to maximize control influence, then voltage control is strengthened, but the manufacturing complexity increases
Solution Approach 1:
The body contact is divided into discrete, positionable regions that can be independently formed during manufacturing. This segmentation allows each body contact region to be positioned at optimal locations using standard fabrication techniques, making the enhanced control structure manufacturable without excessive complexity.
Data Source
AI summary
The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.