Interleaved Metal Plane Substrate for Dielectric Crack Prevention
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Solution Overview
Problem
Conventional substrate designs with vertically aligned copper planes and dielectric material gaps are prone to cracking under thermomechanical stress due to the mechanical weakness of uninterrupted dielectric material columns and rows, which can expose and damage electronic components.
Innovation Solution
The implementation of a metal plane design with alternating protrusions and recesses in adjacent metal layers laterally shifts the gaps, breaking up the vertical and lateral alignment of dielectric material columns and rows, thereby reducing the risk of cracking by creating a zig-zag pattern that minimizes the length of uninterrupted dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If vertically aligned copper planes and dielectric material gaps are used in conventional substrate designs, then the substrate structure is simple and easy to manufacture, but the dielectric material columns and rows are mechanically weak and prone to cracking under thermomechanical stress
Solution Approach 1:
The patent segments the continuous dielectric material columns and rows by laterally offsetting gaps between adjacent copper planes in different metal layers. This creates discontinuous dielectric segments rather than uninterrupted columns, preventing crack propagation through the substrate thickness while maintaining manufacturing simplicity.
Solution Approach 2:
The patent introduces asymmetry by laterally offsetting the gaps between copper planes in adjacent metal layers. Instead of vertical alignment, the gaps are positioned at different lateral locations, creating an asymmetric gap pattern that disrupts the formation of continuous dielectric columns and rows, thereby enhancing mechanical strength.
2Productivity
If vertically aligned copper planes are used in conventional substrate designs, then the manufacturing process is straightforward, but crack propagation can occur through uninterrupted dielectric material columns under thermomechanical stress
Solution Approach 1:
The continuous dielectric material is segmented into discontinuous sections by offsetting gaps between copper planes in adjacent layers. This segmentation prevents crack propagation through the substrate while maintaining a straightforward manufacturing process, as the offset pattern can be integrated into existing fabrication workflows.
Solution Approach 2:
The patent addresses the vertical crack propagation issue by introducing a lateral dimension offset. Instead of modifying the vertical stacking approach, the gaps are shifted laterally in adjacent layers, using another dimension (lateral position) to solve the vertical reliability problem without complicating the manufacturing process.
3Device complexity
If uninterrupted dielectric material columns and rows are formed by vertically aligned copper planes, then the substrate structure is simple, but the mechanical weakness of dielectric material leads to cracking under thermomechanical stress
Solution Approach 1:
The patent introduces asymmetry in the gap positioning between adjacent copper planes, disrupting the symmetric vertical alignment pattern. This asymmetric offset creates discontinuous dielectric segments, enhancing strength without significantly increasing device complexity, as the offset pattern follows a regular, manufacturable design.
Solution Approach 2:
The patent solves the strength issue by transitioning from vertical alignment (one-dimensional stacking) to lateral offsetting (introducing second dimension). This dimensional change creates discontinuous dielectric paths while maintaining relatively simple substrate structure, as the offset pattern can be implemented through standard fabrication techniques.
Data Source
AI summary
Embodiments of a substrate are provided herein, which include: a first metal plane and a second metal plane in a first metal layer, the first and second metal planes laterally separated by a first gap of dielectric material; and a third metal plane and a fourth metal plane in a second metal layer vertically adjacent to the first metal layer, the third and fourth metal planes laterally separated by a second gap of dielectric material, wherein the second gap comprises a first laterally-shifted gap portion and a second laterally-shifted gap portion, the first laterally-shifted gap portion is laterally offset from a vertical footprint of the first gap in a first lateral direction, and the second laterally-shifted gap portion is laterally offset from the vertical footprint of the first gap in a second lateral direction opposite the first lateral direction.