Interlocking Deposition Heads for Uniform SALD Coating
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Solution Overview
Problem
Current spatial atomic layer deposition (SALD) systems face challenges in coating large substrates efficiently due to the need for complex equipment or long motion profiles, and there is a lack of modular solutions that can handle different substrate form factors and provide uniform coatings without defects or non-uniformity.
Innovation Solution
A deposition unit comprising multiple interlocking SALD heads with alternating protrusions and recesses, allowing for a larger effective deposition area and uniform gas zones, which can be easily integrated to coat wider media and accommodate various substrate sizes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a single large deposition head is used to coat wide substrates, then the deposition area is sufficient, but the device complexity and manufacturing difficulty increase significantly
Solution Approach 1:
The deposition head is divided into multiple modular units (first deposition head, second deposition head, third deposition head) that can be independently manufactured and then assembled. Each module contains gas distribution channels and deposition orifices, allowing the system to achieve wide coverage area through modular assembly rather than manufacturing a single complex large head.
2Area of stationary object
If multiple separate deposition heads are used to increase coverage area, then the deposition width increases, but gas mixing and non-uniform coating occur
Solution Approach 1:
Multiple deposition heads are merged into a single integrated assembly where the first, second, and third deposition heads are positioned adjacent to each other with their gas distribution channels aligned. This merging ensures that gases from different sources are distributed uniformly across the substrate without mixing, as each head has dedicated gas supply and the channels are configured to prevent intermixing while maintaining uniform deposition patterns.
3Device complexity
If a deposition head smaller than the substrate is used, then the device complexity is reduced, but long motion profiles and complex equipment are required to handle large substrates
Solution Approach 1:
Instead of moving the deposition head along a long path to cover wide substrates, the invention positions multiple deposition heads side-by-side in the cross-track direction, effectively using the lateral dimension to achieve wide coverage. This eliminates the need for long motion profiles in the in-track direction while maintaining small, simple deposition head designs.
4Ease of manufacture
If modular deposition heads are used to reduce complexity, then manufacturing becomes easier, but ensuring uniform gas distribution and preventing intermixing becomes more difficult
Solution Approach 1:
Each modular deposition head is designed with universal features including standardized gas distribution channel configurations, deposition orifices, and mounting interfaces. The channels are positioned to receive gases from multiple sources while maintaining separate flow paths, and the modules can be assembled in various configurations to handle different substrate sizes and applications while ensuring uniform gas distribution and preventing intermixing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient coating of wider substrates with uniform thickness and reduced equipment complexity, allowing for roll-to-roll processing and handling of different substrate form factors while maintaining gas separation and preventing intermixing.
Implementation Method 1
CVD precursors are volatile molecules that are delivered, in a gaseous phase, to a chamber in order to react at the substrate, forming the thin film thereon
Implementation Method 2
In gas bearing operation, the substrate is free to move in the direction normal the deposition head, and either the substrate or head must be free to move in the direction normal the deposition head
Implementation Method 3
chemical vapor deposition (CVD), which uses chemically reactive molecules that react to deposit a desired film on a substrate
Implementation Method 4
In its most pure form, ALD involves the adsorption and reaction of each of the precursors in the absence of the other precursor or precursors of the reaction
Implementation Method 5
In temporal vacuum ALD, thin-film growth is accomplished by alternating the delivery of two or more reactive materials, or precursors, into a vacuum chamber
Data Source
AI summary
A deposition unit for a thin film deposition system includes a plurality of deposition heads. Each deposition head includes an output face having a plurality of gas slots extending in a cross-track direction. Two of the deposition heads are positioned adjacent to each other in the cross-track direction such that the adjacent deposition heads have abutting ends. The abutting ends of the adjacent deposition heads include interlocking structures having an alternating sequence of protrusions and recesses such that the protrusions on the abutting end of one adjacent deposition head fit into the recesses on the abutting end of the other adjacent deposition head. The gas slots extend into the protrusions on the abutting ends such that in an overlap region, the gas slots of one adjacent deposition head overlap with the gas slots of the other adjacent deposition head.