Intermediate Routing Layers for Dense 3D IC Die Interconnects

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Solution Overview

Problem

Current semiconductor packaging technologies face challenges with low vertical and horizontal interconnect density, leading to routing congestion, signal loss, and reduced die placement flexibility in multi-layer IC die stacks, particularly in complex server architectures.

Innovation Solution

A microelectronic assembly with a quasi-monolithic hierarchical integration architecture using silicon-level interconnect density, comprising multiple IC dies stacked with conductive routing traces in a dielectric layer, and die-to-die interconnects with sub-10 micrometer pitch, enabling efficient lateral and vertical electrical coupling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional packaging technologies are used, then manufacturing simplicity is maintained, but interconnect density is low leading to routing congestion

Engineering Contradiction:
Improveinterconnect densityVSAvoidpackaging architecture complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent transitions from planar 2D routing to 3D vertical stacking with multiple layers, enabling signals to route through the vertical dimension. This dimensional change allows multiple interconnect paths without increasing lateral routing congestion, achieving high interconnect density while maintaining manageable complexity through systematic layer design.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The packaging architecture is segmented into multiple discrete layers with dedicated routing functions. Each layer handles specific signal types or routing domains, allowing independent optimization of each layer's interconnect density without creating system-wide routing conflicts, thus resolving the contradiction between density and complexity.

Inventive Principle:
Principle #1Segmentation

2Reliability

If interconnect density is increased to reduce routing congestion, then signal integrity improves, but manufacturing complexity increases

Engineering Contradiction:
Improvesignal integrityVSAvoidrouting architecture complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Different layers are assigned different routing qualities and functions based on local requirements. High-speed signals use dedicated layers with optimized impedance control, while lower-priority signals use shared layers. This local differentiation achieves high signal integrity for critical paths without requiring maximum complexity across the entire routing architecture.

Inventive Principle:
Principle #3Local quality

3Quantity of substance

If multi-layer stacking is implemented to improve interconnect density, then routing congestion is reduced, but die placement flexibility is reduced

Engineering Contradiction:
Improvevertical interconnect densityVSAvoiddie placement flexibility
Core Design Contradiction:
Quantity of substanceVSAdaptability or versatility

Solution Approach 1:

The intermediate layers serve multiple functions simultaneously: they provide vertical interconnect routing, enable die placement flexibility through standardized interfaces, and offer thermal management pathways. This multi-functionality allows the same architectural structure to achieve high vertical interconnect density while maintaining adaptability for different die placement configurations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12500207B2Packaging architecture with intermediate routing layers
Publication Date: 2025.12.16 INTEL CORP
  • US12500207B2 patent drawing
  • US12500207B2 patent drawing
  • US12500207B2 patent drawing

AI summary

Embodiments of the present disclosure provide a microelectronic assembly comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer; and a third layer between the first layer and the second layer, the third layer comprising conductive routing traces in a dielectric. A first interface is between the first layer and the third layer and includes first interconnects having a first pitch of less than 10 micrometers between adjacent ones of the first interconnects, a second interface is between the second layer and the third layer and includes second interconnects having a second pitch of less than 10 micrometers between adjacent ones of the second interconnects, and the routing traces in the third layer are to provide lateral electrical coupling between the first interconnects and the second interconnects.