Intermetallic Air Gap Sealing With 2D Insulating Thin Films
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Solution Overview
Problem
Existing intermetallic air gap formation technologies are complex and result in reduced effective dielectric constant due to non-conformal CVD film deposition, leading to increased interconnection delay and costs.
Innovation Solution
A method involving the formation of a trench in a solid dielectric, followed by the deposition and annealing of an insulating sheet-like two-dimensional material, such as graphene oxide, to create a stable thin film that seals the trench, thereby forming an intermetallic air gap with a larger formation ratio and reduced effective dielectric constant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-conformal CVD film formation technology is used to seal the trench, then the trench can be sealed to form an intermetallic air gap, but a large number of thin films are deposited in the intermetallic air gap, reducing the actual volume of the air gap and increasing the effective dielectric constant
Solution Approach 1:
The patent extracts the harmful deposition process by replacing CVD with a transfer printing method that places pre-formed thin films onto the trench structure. This eliminates the problem of excessive film deposition within the air gap while maintaining the sealing function, as films are added only where needed rather than being deposited conformally throughout.
Solution Approach 2:
The patent introduces a transfer printing intermediary process that mediates between the sealing requirement and the air gap volume preservation. Instead of direct CVD deposition into the trench, the method uses a separate film preparation and transfer stage, allowing precise control over where and how much film is placed, thus preventing over-deposition in the air gap region.
2Reliability
If additional patterning process and planarization process are used, then the intermetallic air gap can be formed, but the processes become complex
Solution Approach 1:
The patent merges multiple separate processes (patterning, film deposition, and planarization) into a single transfer printing operation. The pre-formed thin films are designed to self-align and self-planarize during the transfer process, eliminating the need for separate patterning and CMP steps while still achieving the required air gap formation.
Solution Approach 2:
The patent performs preliminary actions by pre-forming the thin films outside the trench structure before transfer. The films are prepared with their final thickness and pattern already established, so that when transferred to the trench, no additional patterning or planarization is needed, significantly simplifying the overall process.
3Reliability
If the actual volume of the intermetallic air gap is reduced, then the trench can be sealed, but the effective dielectric constant increases and interconnection delay increases
Solution Approach 1:
The patent extracts the excess film material from the air gap region by using a selective transfer process that places films only on the trench walls and bottom surface without filling the air gap volume. This maintains maximum air gap volume while achieving complete sealing, thereby preserving low dielectric constant and minimizing interconnection delay.
Solution Approach 2:
The patent uses flexible thin film structures that can conform to the trench geometry while maintaining minimal volume occupation. The transferred films form a sealed barrier along the trench surfaces without requiring thick or voluminous material, thus preserving the air gap's electrical performance and reducing interconnection delay.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively increases the intermetallic air gap formation ratio, reduces interconnection delay, and simplifies the integration process by avoiding subsequent flattening steps, while minimizing material usage and costs.
Implementation Method 1
a spin coating process is used to deposit the insulating sheet-shaped two-dimensional material solution on the solid dielectric and the trench
Implementation Method 2
the insulating sheet-shaped two-dimensional material is adsorbed on the solid dielectric and the trench to form a thin film
Implementation Method 3
annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable insulating sheet-like two-dimensional material thin film
Implementation Method 4
the heating causes the solvent to evaporate, thereby forming a thin film composed of an insulating sheet-like two-dimensional material on the solid dielectric and the trench
Data Source
AI summary
The present invention discloses a method for forming an intermetallic air gap, which comprises following steps: S01: forming a trench in a solid dielectric; S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is greater than the size of the trench; S03: the insulating sheet-like two-dimensional material is deposited on the solid dielectric and the trench; S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable thin film composed of insulating sheet-like two-dimensional material on the trench. The method for forming an intermetallic air gap provided by the present disclosure can effectively increase the intermetallic air gap formation ratio, and greatly reduce the effective dielectric constant and interconnection delay, further reduce costs, and improve product performance.