Optoelectronic Component with Intermixed Quantum Well for Light Extraction
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Solution Overview
Problem
In optoelectronic components, particularly LEDs, metal electrical contacts on the radiation exit surface can impede light extraction as light emitted beneath the metal contact is absorbed rather than escaping the semiconductor body.
Innovation Solution
An optoelectronic component with a quantum well structure that includes intermixed and non-intermixed regions, where the intermixed region beneath the metal contact has a larger electronic bandgap, reducing radiative recombination and allowing charge carriers to diffuse into non-intermixed regions for increased light extraction, and a method involving thermal treatment with dielectric layers to create this intermixed region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal electrical contact is provided on the radiation exit surface of the semiconductor body, then good electrical conductivity is achieved, but light extraction is reduced because light emitted beneath the metal contact is absorbed by the metal
Solution Approach 1:
The quantum well structure is designed with spatially varying composition: the first region (beneath the metal contact) has a larger bandgap that suppresses radiative recombination, while the second region has a smaller bandgap that promotes light emission. This local differentiation allows the structure to simultaneously maintain electrical conductivity through the metal contact while optimizing light extraction from specific regions.
Solution Approach 2:
The bandgap parameter of the quantum well structure is deliberately varied across different regions by changing the compositional parameters (e.g., aluminum content in AlGaN). The first region uses a higher bandgap parameter to minimize parasitic absorption, while the second region uses a lower bandgap parameter to maximize light emission, thereby resolving the contradiction between electrical contact function and light extraction efficiency.
2Loss of energy
If the quantum well structure is intermixed to create a larger bandgap region beneath the metal contact, then light extraction is improved by reducing radiative recombination in that area, but the structural complexity of the semiconductor body increases
Solution Approach 1:
The quantum well structure is designed during the epitaxial growth process to inherently contain the intermixed region with larger bandgap beneath the metal contact contact. This preliminary design integrates the light extraction optimization into the fundamental structure rather than adding post-processing complexity, allowing the larger bandgap region to be created as part of the original quantum well fabrication.
Solution Approach 2:
The invention merges multiple functions into a single quantum well structure: it simultaneously serves as the active region for light emission, the region for electrical injection, and the region with differentiated bandgap for optimizing both light extraction and electrical contact performance. The intermixed region is integrated into the quantum well structure itself rather than being a separate component, reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light extraction by minimizing radiation absorption at the electrical contact, allowing more light to be emitted from the optoelectronic component without significant reduction in electrical conductivity.
Implementation Method 1
at least one of the quantum well layer and the barrier layers are at least partially intermixed in the intermixed region. The intermixed region comprises a larger electronic bandgap than the at least one quantum well layer in the non-intermixed region
Implementation Method 2
allowing charge carriers to diffuse into non-intermixed regions for increased light extraction
Implementation Method 3
a method involving thermal treatment with dielectric layers to create this intermixed region
Data Source
AI summary
An optoelectronic component (10) is specified, comprising a semiconductor body (6) with an active region (4) suitable for emission of radiation and comprising a quantum well structure, wherein the quantum well structure comprises at least one quantum well layer (41) and barrier layers (42), a first electrical contact (1) and a second electrical contact (2), wherein the active region (4) comprises at least one intermixed region (44) and at least one non-intermixed region (43).The at least one quantum well layer (41) and the barrier layers (42) are at least partially intermixed in the intermixed region (44), such that the intermixed region (44) comprises a larger electronic bandgap than the at least one quantum well layer (41) in the non-intermixed region (43). The first electrical contact (1) is a metal contact arranged on a radiation exit surface of the semiconductor body (6), wherein the intermixed region (44) is arranged below the first contact (1) in the vertical direction. Further, a method for producing the optoelectronic component (10) is specified.