Internal Gate Spacer Thickness Layout for Semiconductor Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high reliability and integration complexity due to the demands for higher speed and multifunctionality, necessitating improved structural designs.
Innovation Solution
The semiconductor device incorporates varying thicknesses of internal gate spacers on different regions of the substrate, with concave shapes facing the source/drain patterns, to enhance reliability and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor device structure is made increasingly complex to meet high reliability and multifunctionality demands, then device performance and functionality are improved, but manufacturing complexity and difficulty increase
Solution Approach 1:
The patent applies local quality by forming internal gate spacers with different thicknesses in different regions of the semiconductor device. Specifically, the first internal gate spacer has a first thickness and the second internal gate spacer has a second thickness, allowing each region to be optimized for its specific functional requirements while maintaining overall device reliability without uniformly increasing complexity throughout the entire structure
2Reliability
If the internal gate spacer thickness is varied to optimize device performance, then reliability and functionality are enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the gate spacer structure into multiple portions with different thicknesses - a first internal gate spacer with a first thickness and a second internal gate spacer with a second thickness. This segmentation allows each segment to be independently optimized for its specific location and function, enabling precise control over the overall device performance while managing manufacturing precision requirements through modular design
3Reliability
If concave-shaped internal gate spacers are used to face source/drain patterns, then structural integrity and reliability are improved, but fabrication process complexity increases
Solution Approach 1:
The patent employs curvature by forming the internal gate spacers with concave shapes that face the source/drain patterns. The first internal gate spacer and second internal gate spacer both have concave configurations, which improve structural integrity and electrical performance by better conforming to the underlying channel structure. This curved geometry allows for optimized electric field distribution while maintaining manufacturability through standard semiconductor fabrication techniques
Data Source
AI summary
A semiconductor device includes first source/drain patterns spaced apart in a first direction on a first region of a substrate, a first gate structure extending in a second direction intersecting the first direction, second source/drain patterns spaced apart in the first direction on a second region of the substrate, a second gate structure extending in the second direction, a first internal gate spacer between the first gate structure and one of the first source/drain patterns, and a second internal gate spacer between the second gate structure and one of the second source/drain patterns. The first and second internal gate spacers have first and second thicknesses, respectively, in the first direction. The first thickness of the first internal gate spacer at a center point thereof along the second direction is different from the second thickness of the second internal gate spacer at a center point thereof along the second direction.