Internal Matching Transistor Capacitance Adjustment

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Solution Overview

Problem

Conventional internal matching transistors require changes in the internal matching circuit or package size to adjust operating frequency bands, limiting flexibility and efficiency.

Innovation Solution

An internal matching transistor design featuring a conductive base material with grooves and embedded conductive or non-conductive materials between gold wires and grooves, allowing capacitance adjustment without altering the internal matching circuit or package size, enabling frequency band adjustment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the internal matching circuit or package size is changed to adjust operating frequency, then the operating frequency band can be adjusted, but the device complexity and design flexibility are reduced

Engineering Contradiction:

Improveoperating frequency band adjustmentVSAvoidinternal matching circuit or package size

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent changes the physical parameters of the base material (conductivity, groove depth, groove width) to adjust capacitance values, which in turn adjusts the operating frequency band without requiring changes to the internal matching circuit topology or package dimensions. This allows frequency adjustment while maintaining device structural consistency.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the conventional mechanical approach of adjusting frequency by changing circuit layouts or package sizes with an electromagnetic field-based approach using capacitance adjustment through controlled material properties and geometric parameters of the base material.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Adaptability or versatility

If the internal matching circuit is changed according to operating frequency, then frequency adjustment is achieved, but manufacturing complexity increases

Engineering Contradiction:

Improvefrequency band adjustmentVSAvoidinternal matching circuit production

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent creates a universal base material structure that can serve multiple frequency bands by adjusting physical parameters rather than creating different circuit designs for each frequency. The same basic transistor and matching circuit layout can be used across different frequency applications by simply modifying base material characteristics.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If the gold wire length or height is changed to achieve matching, then impedance matching is improved, but the package outside size must be changed

Engineering Contradiction:

Improveimpedance matchingVSAvoidpackage outside size

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

The patent introduces localized capacitance adjustment through the base material's groove structure and material properties in specific regions, allowing impedance matching to be achieved without changing the overall package dimensions. The local electrical properties are modified while maintaining global structural consistency.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables flexible frequency band adjustment without changing the internal matching circuit or package size, enhancing operational efficiency and reducing design complexities.

Implementation Method 1

capacitance between the wire and the base material is adjusted by the material

Methodology Applied

Scientific EffectCapacitance: Capacitance

Data Source

PatentUS8217496B2Internal matching transistor

Publication Date: 2012.07.10 MITSUBISHI ELECTRIC CORP

AI summary

An internal matching transistor comprises: a conductive base material including a groove, a first region, and a second region which is located opposite to the first region across the groove; a transistor bonded onto the first region of the base material; an internal matching circuit bonded onto the second region of the base material; a wire connecting the transistor to the internal matching circuit across above the groove; and a conductive or non-conductive material located between the wire and the groove, wherein capacitance between the wire and the base material is adjusted by the material.