Internal Source Voltage Generating Circuit for Semiconductor Memory

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Solution Overview

Problem

Semiconductor memory devices face challenges in rapidly restoring a stable internal source voltage when it abruptly drops due to high current consumption in active mode and low current consumption in standby mode, which can lead to malfunctions, especially in varying temperature environments.

Innovation Solution

The internal source voltage generating circuit includes a comparison voltage generator, internal voltage driver, and driving current generator using PMOS and NMOS transistors to differentially amplify voltages and increase driving current when the internal source voltage drops, allowing for rapid restoration without separately detecting peripheral circuit voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the internal source voltage generating circuit operates in active mode with high current driving ability, then the response speed is improved, but the current consumption increases

Engineering Contradiction:
Improveresponse speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent implements dynamic operation mode switching between standby and active modes. The circuit automatically transitions from a low-current standby configuration to a high-current active configuration when voltage drop is detected, and returns to standby when stable. This dynamic adaptation resolves the contradiction by providing high response speed only when needed (active mode) while minimizing current consumption during normal operation (standby mode).

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the operating parameters (current driving ability, response speed) based on the operational state. In standby mode, the circuit operates with limited current driving ability to reduce consumption. When an abrupt voltage drop occurs, the circuit switches to active mode with enhanced current driving ability and faster response speed. This parameter change strategy allows the circuit to optimize between speed and energy consumption based on real-time conditions.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If the internal source voltage generating circuit operates in standby mode with low current consumption, then the current consumption is reduced, but the response speed decreases

Engineering Contradiction:
Improvecurrent consumptionVSAvoidresponse speed
Core Design Contradiction:
Use of energy by moving objectVSSpeed

Solution Approach 1:

The patent prepares the circuit for rapid response by maintaining a standby mode that is pre-configured but not fully activated. The standby circuit retains the capability for quick transition to active mode through pre-positioned transistors and control logic, enabling fast response when needed while consuming minimal current during normal operation. This preliminary preparation resolves the contradiction between low current consumption and fast response capability.

Inventive Principle:
Principle #10Preliminary action

3Use of energy by moving object

If the internal source voltage drops abruptly during internal operation, then the current consumption is reduced temporarily, but the stability and reliability deteriorate

Engineering Contradiction:
Improvecurrent consumptionVSAvoidstability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent implements a feedback mechanism that continuously monitors the internal source voltage at the output node. When an abrupt voltage drop is detected, the feedback signal triggers the switching control to transition from standby to active mode, rapidly restoring the voltage. When the voltage stabilizes, the feedback signal initiates a return to standby mode. This closed-loop feedback control resolves the contradiction by automatically responding to voltage drops and maintaining stability while allowing temporary current reduction during normal operation.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent prepares compensatory measures in advance by maintaining the standby circuit in a ready state capable of immediate activation. The standby circuit includes pre-configured transistors and control logic that can rapidly compensate for voltage drops without requiring external intervention or complex detection of peripheral circuit voltages. This beforehand preparation ensures reliability is maintained while allowing current consumption to be minimized during normal operation.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution efficiently restores the internal source voltage to a normal level quickly, reducing response time and current consumption, thus preventing malfunctions and maintaining stability across different operational conditions.

Implementation Method 1

outputs to a second node a comparison voltage which is differentially amplified in response to a voltage of a first node determined according to a difference between the reference voltage and the internal source voltage

Methodology Applied
Scientific EffectDifferential amplification:

Implementation Method 2

a first PMOS transistor and a first NMOS transistor which are serially connected between the external source voltage and the third node, and which have gates connected to the first node and the reference voltage, respectively

Methodology Applied
Scientific EffectField effect transistor operation:

Implementation Method 3

a driving current generator which increases the driving current flowing from the third node to the fourth node in response to the voltage of the first node which rises when the internal source voltage abruptly drops

Methodology Applied
Scientific EffectCurrent amplification:

Data Source

PatentUS8120971B2Internal source voltage generating circuit of semiconductor memory device
Publication Date: 2012.02.21 SAMSUNG ELECTRONICS CO LTD
  • US8120971B2 patent drawing
  • US8120971B2 patent drawing
  • US8120971B2 patent drawing

AI summary

An internal source voltage generating circuit includes a comparison voltage generator which receives reference and internal source voltages, outputs to a second node a comparison voltage differentially amplified responsive to a voltage of a first node according to a difference between the reference and internal source voltages, and allows a driving current to flow from a third node to a fourth node. An internal voltage driver transfers an external source voltage to an output node responsive to the comparison voltage. A driving current generator increases the driving current flowing from the third node to the fourth node responsive to the voltage of the first node which rises when the internal source voltage abruptly drops. The internal source voltage generating circuit is insensitive to variation of an external source voltage, exhibits improved response time when an internal source voltage abruptly drops, and stably generates an internal source voltage.