Internal Voltage Generation Circuit Drivability Control

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Solution Overview

Problem

Existing internal voltage generation circuits in semiconductor memory apparatuses face challenges in maintaining stable internal voltage levels during active operations and are affected by transistor characteristic changes due to process, voltage, and temperature (PVT) variations, which impacts drivability and reliability.

Innovation Solution

An internal voltage generation circuit comprising a voltage comparison circuit, a voltage driving circuit, and a drivability control circuit that adjusts the control voltage level based on an enable signal during active operations, and a loading control circuit that adjusts resistance values based on data information to stabilize internal voltage generation across PVT skew conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the internal voltage generation circuit uses a conventional design without drivability control, then the circuit structure is simple, but the internal voltage becomes unstable during active operations and under PVT variations

Engineering Contradiction:
Improveinternal voltage stabilityVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements a feedback mechanism where the internal voltage generated by the voltage driving circuit is fed back to the voltage comparison circuit. The voltage comparison circuit compares the feedback voltage with a reference voltage and adjusts the control voltage accordingly, forming a closed-loop control system that stabilizes the internal voltage during active operations and under PVT variations.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent introduces a drivability control circuit that dynamically adjusts the drivability of the voltage driving circuit based on an enable signal activated during active operations. This dynamic adjustment allows the circuit to adapt its characteristics in real-time to maintain stable internal voltage generation under varying operating conditions without requiring a completely complex redesign.

Inventive Principle:
Principle #15Dynamics

2Reliability

If the internal voltage generation circuit does not compensate for transistor characteristic changes, then the circuit design is straightforward, but the internal voltage becomes unstable under process, voltage, and temperature variations

Engineering Contradiction:
Improveinternal voltage stability under PVTVSAvoidcontrol circuit
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The feedback mechanism continuously monitors the internal voltage through the feedback voltage and adjusts the control voltage via the voltage comparison circuit to compensate for transistor characteristic changes caused by PVT variations, maintaining stable internal voltage generation.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The drivability control circuit changes the drivability parameter of the voltage driving circuit based on the enable signal and operating conditions, allowing the circuit to adapt to PVT variations by adjusting its electrical characteristics in response to changing transistor performance.

Inventive Principle:
Principle #35Parameter changes

3Ease of operation

If the control voltage level is not adjusted during active operations, then the circuit operation is simple, but the drivability of the voltage driving circuit is insufficient

Engineering Contradiction:
ImprovedrivabilityVSAvoidvoltage control
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The drivability control circuit dynamically adjusts the control voltage level based on the enable signal that is activated during active operations. This dynamic control enhances the drivability of the voltage driving circuit when needed while keeping the control mechanism relatively simple through the use of signal-based activation.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11688434B2Internal voltage generation circuit and semiconductor memory apparatus including the same
Publication Date: 2023.06.27 SK HYNIX INC
  • US11688434B2 patent drawing
  • US11688434B2 patent drawing
  • US11688434B2 patent drawing

AI summary

An internal voltage generation circuit may include: a voltage comparison circuit configured to generate a control voltage by comparing a reference voltage and an internal voltage which is fed back thereto; a voltage driving circuit configured to generate an internal voltage based on the control voltage; and a drivability control circuit configured to control the voltage level of the control voltage based on an enable signal which is activated during an active operation, in order to control drivability of the voltage driving circuit.