Internal Voltage Generation Circuit Noise Suppression
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Solution Overview
Problem
Existing internal voltage generation circuits in semiconductor devices face challenges in effectively suppressing noise due to increasing distances between paired negative voltage generation circuits, leading to reduced noise suppression capability and current consumption inefficiencies.
Innovation Solution
The internal voltage generation circuit is configured with pairs of negative voltage generation units connected in parallel, where each unit includes a charge pump circuit and signal drive circuit driven by oscillator signals of opposite phases, and arranged adjacent to each other to minimize voltage variations and fluctuations, enhancing noise suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If paired negative voltage generation circuits are arranged far apart in the internal voltage generation circuit, then the area occupied by the circuit is reduced, but the noise suppression capability is deteriorated due to increased distance between paired circuits
Solution Approach 1:
The internal voltage generation circuit is divided into multiple independent pairs of negative voltage generation circuits (first and second circuits). Each pair operates independently with opposite-phase drive signals, allowing modular arrangement that reduces overall circuit area while maintaining noise suppression within each compact pair.
Solution Approach 2:
Within each paired configuration, the first and second negative voltage generation circuits are positioned adjacent to each other to ensure local noise cancellation through opposite-phase operation. This local adjacency maintains noise suppression capability while the overall circuit uses multiple such pairs to reduce total area occupation.
2Productivity
If multiple pairs of negative voltage generation circuits are used to increase current supply capacity, then the current consumption efficiency is improved, but the circuit complexity is increased
Solution Approach 1:
The circuit uses multiple identical pairs of negative voltage generation circuits that can be independently controlled. Each pair contributes to the total current supply capacity, and the modular structure allows scaling current capacity by simply adding or activating more pairs without redesigning the entire circuit.
Solution Approach 2:
The circuit enables dynamic control of current consumption by selectively activating or deactivating specific pairs of negative voltage generation circuits based on the required current supply capacity. This dynamic operation allows the circuit to adapt to different load conditions and optimize power efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces noise generation and maintains low current consumption by ensuring that voltage variations between adjacent units are minimal, thereby improving the overall noise suppression capability of the internal voltage generation circuit.
Implementation Method 1
In general, in the charge pump circuit 22, a capacitor is electrically charged or discharged in synchronization with a high period or a low period of the oscillator signal
Data Source
AI summary
An internal voltage veneration circuit includes negative voltage generation circuits of a first type and a second type, and the negative voltage generation circuits of the first type and the second type are connected parallel to each other. A drive signal is input to a charge pump circuit from a signal drive circuit in opposite phases in the negative voltage generation circuits of the first type and in the negative voltage generation circuits of the second type. A plurality of pairs of a negative voltage generation circuit of the first type and a negative voltage generation circuit of the second type are disposed, and the negative voltage generation circuit of the first type and the negative voltage generation circuit of the second type are located adjacent to each other.