Internal Voltage Generation Using CTAT and PTAT Transistors
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Solution Overview
Problem
Conventional internal voltage generating methods for semiconductor devices, such as DRAM, fail to effectively compensate for temperature characteristics, leading to variations in current dissipation and responsiveness, which can result in reduced reliability and increased power consumption.
Innovation Solution
An internal voltage generating apparatus that utilizes a combination of complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) type transistors, along with a buffer circuit and internal voltage generating circuit, to generate reference voltage signals that adjust the temperature-dependent response characteristic, enabling improved temperature compensation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional down-conversion method using unit gain buffer and amplifier is used, then internal voltage can be generated, but temperature characteristic compensation is insufficient leading to reliability reduction
Solution Approach 1:
The patent changes the voltage parameters by introducing temperature-dependent voltage signals (Vref_ctat and Vref_ptat) that vary with temperature to compensate for the internal voltage generation. The CTAT signal decreases with temperature while PTAT increases, allowing their combination to offset temperature-induced variations in the internal voltage, thereby maintaining stable operation across temperature ranges and improving reliability.
2Use of energy by stationary object
If conventional buffer circuit is used, then reference voltage can be generated, but current dissipation increases at temperature extremes
Solution Approach 1:
The patent implements feedback by using temperature-dependent reference voltages (Vref_ctat and Vref_ptat) that are fed back to the buffer circuit to adjust the internal voltage generation. This feedback mechanism dynamically compensates for temperature-induced current dissipation variations, reducing power consumption at temperature extremes while maintaining stable voltage output across operating conditions.
3Use of energy by moving object
If internal voltage is used to drive current, then power consumption decreases compared to external voltage, but temperature-induced voltage variations reduce responsiveness
Solution Approach 1:
The patent changes the voltage parameters by incorporating temperature-dependent reference voltages (Vref_ctat and Vref_ptat) into the internal voltage generation process. These varying parameters compensate for temperature-induced shifts in voltage levels, maintaining optimal drive current and responsiveness across temperature ranges while preserving the power consumption benefits of internal voltage generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively stabilizes the internal voltage generation, enhancing the operational reliability and reducing power consumption by adjusting the temperature response characteristic, thereby improving the semiconductor device's performance and reliability.
Implementation Method 1
a complementary to absolute temperature (CTAT) type transistor and a proportional to absolute temperature (PTAT) type transistor for generating a first to a third initial reference voltage signals
Implementation Method 2
a complementary to absolute temperature (CTAT) type transistor and a proportional to absolute temperature (PTAT) type transistor for generating a first to a third initial reference voltage signals
Data Source
AI summary
An internal voltage generating apparatus adaptive to a temperature change includes a reference voltage circuit including a complementary to absolute temperature (CTAT) type transistor and a proportional to absolute temperature (PTAT) type transistor for generating a first to a third initial reference voltage signals. A buffer circuit for buffering a first, a second and a third initial reference voltage signal is included to generate a first, a second, and a third reference voltage signal in response to enable signals. An internal voltage generating circuit is included to generate an internal voltage signal based on the first, the second and the third reference voltage signal by using an inputted power voltage.