Internal Voltage Generation Circuit with Dynamic Threshold Adjustment
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Solution Overview
Problem
Semiconductor devices face challenges in generating internal voltage signals efficiently, as existing charge pump circuits require high voltage and low voltage signals, which are not effectively managed by current internal voltage generation circuits, leading to inefficiencies and increased power consumption.
Innovation Solution
An internal voltage generation circuit comprising a bulk voltage generator, a reference voltage generator, and an internal voltage driver that adjusts threshold voltages of pull-up and pull-down elements using power supply and core voltage signals, and ground and low voltage signals, respectively, to manage internal voltage signals within defined reference voltage limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge pump circuits are used to generate high voltage and low voltage signals, then internal voltage signals can be generated, but power consumption increases and efficiency decreases
Solution Approach 1:
The patent changes the operating parameters of the internal voltage generation circuit by using bulk voltage signals to dynamically adjust the threshold voltages of transistors in the voltage driver stage. This allows the circuit to operate more efficiently across different voltage conditions, reducing power consumption while maintaining reliable internal voltage signal generation.
Solution Approach 2:
The bulk voltage generator produces bulk voltage signals that are fed back to control the threshold voltages of the voltage driver transistors. This self-regulating mechanism allows the circuit to automatically optimize its own operation, adjusting threshold voltages based on actual operating conditions to minimize power consumption while ensuring stable internal voltage generation.
2Reliability
If charge pump circuits are used to generate high voltage and low voltage signals, then internal voltage signals can be generated, but circuit efficiency decreases
Solution Approach 1:
The patent dynamically changes the threshold voltage parameters of the voltage driver transistors using bulk voltage signals. This allows the circuit to adapt its operating characteristics to different load conditions and voltage requirements, improving overall circuit efficiency while maintaining reliable internal voltage signal generation.
Solution Approach 2:
The invention introduces dynamic control of threshold voltages through bulk voltage signals, allowing the circuit to continuously adapt its operating point. This dynamic adjustment optimizes the switching characteristics of transistors, improving circuit efficiency compared to static threshold voltage designs.
3Ease of operation
If threshold voltages are not adjusted, then circuit operation is simple, but leakage currents increase and power consumption increases
Solution Approach 1:
The patent adjusts the threshold voltage parameter of transistors using bulk voltage signals to optimize circuit performance. By dynamically changing the threshold voltage, the circuit reduces leakage currents during standby and low-activity periods while maintaining ease of operation through automatic control.
Solution Approach 2:
The bulk voltage generator provides feedback control to the voltage driver stage by adjusting threshold voltages based on circuit operating conditions. This feedback mechanism automatically reduces leakage currents without requiring complex external control, maintaining ease of operation while reducing energy loss.
Data Source
AI summary
An internal voltage generation circuit includes a bulk voltage generator and an internal voltage driver. The A bulk voltage generator is configured to output any one of a power supply voltage signal and a core voltage signal as a first bulk voltage signal and any one of a ground voltage signal and a low voltage signal as a second bulk voltage signal. An internal voltage driver receives the first and second bulk voltage signals to pull down an internal voltage signal when a level of the internal voltage signal is higher than a level of an upper limit reference voltage signal and to pull up the internal voltage signal when a level of the internal voltage signal is lower than a level of a lower limit reference voltage signal.