Internal Voltage Generator for Semiconductor Memory Current Reduction

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Solution Overview

Problem

Conventional internal voltage generators in semiconductor memory devices consume excessive current due to continuous operation of active drivers even after the minimum row active time has passed, leading to inefficient core voltage management and increased power consumption.

Innovation Solution

An internal voltage generator that includes a voltage sensor to detect the internal voltage level and selectively control the operation of voltage drivers based on this level, reducing the number of active mode voltage generators during periods when the core voltage is higher than the reference voltage to minimize current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If active mode voltage generators are continuously operated to maintain core voltage VCORE, then voltage stability is improved, but current consumption increases

Engineering Contradiction:
Improvecore voltage stabilityVSAvoidcurrent consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies dynamics by making the operation state of voltage generators changeable based on real-time conditions. The controller dynamically switches between standby mode and active mode for different voltage generators according to the current operational phase (active operation vs. precharge operation), allowing the system to adapt its power consumption characteristics to actual needs rather than maintaining a fixed operational state

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements periodic action by alternating the operational modes of voltage generators in different time periods. During active operations, certain voltage generators are activated to ensure stable core voltage supply, while during precharge operations, these same generators are deactivated and only standby mode generators operate, creating a periodic pattern of high and low power consumption states that matches the operational requirements

Inventive Principle:
Principle #19Periodic action

2Power

If multiple active mode voltage generators are used to ensure sufficient current supply during active operation, then power delivery capability is improved, but device complexity increases

Engineering Contradiction:
Improvecurrent supply capabilityVSAvoidvoltage generator configuration
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the voltage generator system into functionally distinct groups: standby mode voltage generators that operate continuously and active mode voltage generators that are activated only when needed. This segmentation allows the system to have multiple voltage generators for high power capability while managing complexity through clear functional separation and centralized control logic that manages each group according to operational requirements

Inventive Principle:
Principle #1Segmentation

3Loss of energy

If voltage generators are deactivated after minimum row active time to reduce power consumption, then energy efficiency is improved, but voltage stability may be compromised

Engineering Contradiction:
Improvepower consumption reductionVSAvoidvoltage stability
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent implements feedback by using the internal voltage active signal VINTACT as a control input that reflects the actual voltage stability requirements of the system. The controller monitors this signal and uses it to determine when it is safe to deactivate active mode voltage generators, ensuring that deactivation decisions are based on real-time voltage stability conditions rather than fixed timing, thus maintaining reliability while achieving energy savings

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS7599240B2Internal voltage generator of semiconductor memory device
Publication Date: 2009.10.06 SK HYNIX INC
  • US7599240B2 patent drawing
  • US7599240B2 patent drawing
  • US7599240B2 patent drawing

AI summary

An internal voltage generator of a semiconductor memory device controls generating an internal voltage according to an increase of the internal voltage during an active mode, to thereby decrease current consumption. The internal voltage generator of a semiconductor memory device includes a voltage sensor, a plurality of first control units, a plurality of second control units, and a plurality of voltage drivers. The voltage sensor detects an internal voltage. The plurality of first control units generate a plurality of internal control signals according to the voltage level of an output of the voltage sensor. The plurality of second control units generate a plurality of driver control signals in response to the plurality of internal control signals. The plurality of voltage drivers are turned on/off in response to the plurality of driver control signals.