Internal Voltage Generator with Dynamic Reference Control

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Solution Overview

Problem

Semiconductor memory devices face inaccuracies in internal voltage generation due to manufacturing variances, leading to inconsistent voltage levels, which require time-consuming adjustments through laser fuse circuits to meet design specifications.

Innovation Solution

A method and circuit configuration that control internal voltage by generating a reference voltage, using a control signal generator and detector circuits to adjust the internal voltage to a target level, ensuring it is higher than a detection voltage during power-up and then reduced to a target voltage, utilizing electrical fuse data stored in a memory cell array to fine-tune the voltage generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If manufacturing processes are used to generate internal voltage, then voltage generation is achieved, but voltage accuracy deteriorates due to manufacturing variances

Engineering Contradiction:

Improveinternal voltage accuracyVSAvoidvoltage level consistency

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent implements a feedback mechanism where the internal voltage is continuously monitored and compared against a target voltage. Based on the detection result, control data is adjusted to dynamically regulate the reference voltage, ensuring the internal voltage converges to the target value despite manufacturing variances.

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The patent changes the reference voltage parameter dynamically based on detected internal voltage levels. By adjusting the reference voltage according to control data, the system compensates for manufacturing inaccuracies and achieves the desired internal voltage accuracy.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If laser fuse circuits are used to adjust internal voltage, then voltage accuracy is improved, but adjustment time increases

Engineering Contradiction:

Improvevoltage level accuracyVSAvoidadjustment time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent replaces the mechanical laser fuse circuit adjustment method with an electronic control system. Instead of physically altering circuit resistance through laser blowing, the system uses electronic control data to dynamically adjust the reference voltage, achieving the same voltage correction purpose without the time-consuming laser process.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent performs preliminary detection of the internal voltage level and generates appropriate control data before final operation. This preliminary action allows the system to pre-calculate the necessary voltage adjustment, eliminating the need for time-consuming post-manufacturing adjustments.

Inventive Principle:

Principle #10Preliminary action

3Speed

If internal voltage is set to target level immediately, then power-up speed is improved, but voltage stability deteriorates during power-up

Engineering Contradiction:

Improvepower-up speedVSAvoidvoltage stability during power-up

Core Design Contradiction:

SpeedVSStability of the object's composition

Solution Approach 1:

The patent implements a dynamic voltage adjustment process where the internal voltage is initially set higher than the target voltage during power-up, then gradually reduced to the target level based on detection results. This dynamic approach ensures voltage stability during the transient power-up phase while still achieving fast overall power-up.

Inventive Principle:

Principle #15Dynamics

Data Source

PatentUS7724583B2Internal voltage generator and control method thereof, and semiconductor memory device and system including the same

Publication Date: 2010.05.25 SAMSUNG ELECTRONICS CO LTD

AI summary

An internal voltage of a semiconductor memory device is controlled, where the internal voltage is set according to a reference voltage. The reference voltage is controlled according to first control data to increase the internal voltage to be higher than a target voltage in a power-up operation, and second control data is read. The reference voltage is then controlled according to the second control data to decrease the internal voltage to the target voltage.