Internal Voltage Generator Dynamic Mode Switching
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Solution Overview
Problem
Conventional internal voltage generators in semiconductor memory devices face inefficiencies in generating internal voltages required for active mode operations due to delayed response and leakage current issues, particularly when transitioning from standby to active modes.
Innovation Solution
The internal voltage generator incorporates a driving controller to generate mode-specific drive control signals, enabling a mirror-type amplifier and an operational amplifier (OP AMP) to adjust driving abilities based on standby or active modes, reducing leakage current in standby mode and enhancing voltage generation speed and stability in active mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a mirror-type amplifier with NMOS transistor dead zone is used to prevent leakage current, then leakage current is reduced, but response time increases and voltage generation speed decreases
Solution Approach 1:
The patent implements dynamic switching between two voltage generation paths based on operational mode: in standby mode, the mirror-type amplifier with dead zone is used to minimize leakage current; in active mode, the operational amplifier path is activated to provide fast response and high-speed voltage generation. This dynamic configuration resolves the contradiction by adapting the system characteristics to operational requirements.
Solution Approach 2:
The voltage generation system is segmented into two independent paths: one using mirror-type amplifier for standby mode and another using operational amplifier for active mode. Each segment is optimized for its specific function, allowing the system to achieve both low leakage current and fast response time by selecting the appropriate segment for the current operational state.
2Device complexity
If the same voltage generation circuit is used in both standby and active modes, then device complexity is minimized, but performance is insufficient for active mode operations
Solution Approach 1:
The patent creates a multi-functional voltage generation system where two different amplifier circuits serve different operational modes. The first voltage generation circuit handles standby mode requirements, while the second circuit handles active mode requirements. Both circuits share common control logic and output stages, achieving universality without excessive complexity.
Solution Approach 2:
The system dynamically switches between two voltage generation paths based on operational mode signals. The driving controller generates mode-specific control signals that enable or disable each path, allowing the system to adapt its complexity to operational needs and achieve high productivity in active mode while maintaining low power consumption in standby mode.
Data Source
AI summary
An internal voltage generator of a semiconductor memory device is capable of changing driving abilities between standby and active modes, to respond faster in the active mode and prevent a leakage current in the standby mode. The internal voltage generator of a semiconductor memory device comprises a driving controller for generating drive control signals having information about standby and active modes, a first voltage generator enabled by the drive control signals for comparing an internal voltage with a reference voltage in the standby and active modes, a first driver for generating the internal voltage according to a comparison performed by the first voltage generator, a second voltage generator enabled by the drive control signal for comparing the internal voltage with the reference voltage in the active mode, and a second driver for generating the internal voltage according to a comparison performed by the second voltage generator.