Internal Voltage Generator Temperature Compensation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor integrated circuits face performance degradation due to temperature variations, as internal voltages are not effectively controlled, leading to decreased current drivability of NMOS transistors in low temperature conditions.
Innovation Solution
An internal voltage generator with variable reference voltage generating units that adjust base reference voltages based on temperature conditions, using temperature-proportion, temperature-inverse-proportion, and temperature-independent type reference voltage generating units to control cell voltage, elevated voltage, and substrate bias voltage levels, ensuring optimal operation across temperature ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed reference voltage is used to generate internal voltages, then the circuit structure is simple, but the current drivability of NMOS transistors degrades in low temperature conditions
Solution Approach 1:
The reference voltage is changed from a fixed value to a dynamically adjustable value that varies with temperature. The voltage generating circuit switches between a first reference voltage (at low temperatures) and a second reference voltage (at high temperatures) to maintain optimal current drivability across different temperature conditions.
Solution Approach 2:
The reference voltage parameter is changed based on temperature conditions. By selecting different reference voltage values (first reference voltage vs. second reference voltage) according to temperature, the internal voltages are optimized for each temperature range, improving transistor performance without requiring complete circuit redesign.
2Reliability
If internal voltages are not adjusted for temperature variations, then the voltage generation circuit is simple, but the semiconductor integrated circuit performance degrades
Solution Approach 1:
A temperature detection mechanism provides feedback about the operating temperature to the voltage generating circuit. Based on this feedback, the circuit automatically selects the appropriate reference voltage to maintain optimal performance across temperature variations.
Solution Approach 2:
The voltage generation system transitions from a static design to a dynamic one that adapts to temperature changes. The circuit actively adjusts reference voltages based on real-time temperature conditions, ensuring consistent performance without requiring manual intervention or complex external compensation circuits.
3Manufacturing precision
If a single reference voltage is used for all internal voltage generation, then the voltage generation unit is simple, but the control precision of internal voltages decreases
Solution Approach 1:
The reference voltage system is segmented into multiple discrete reference voltage levels (first reference voltage and second reference voltage). Each reference voltage is optimized for specific temperature ranges, allowing precise control of internal voltages by selecting the appropriate reference level based on operating conditions.
Solution Approach 2:
The reference voltage parameter is discretized into multiple selectable values rather than using a single fixed value. This enables precise voltage control by matching the appropriate reference voltage to the current temperature condition, improving voltage generation accuracy without requiring continuous adjustment mechanisms.
Data Source
AI summary
The internal voltage generator of a semiconductor integrated circuit includes at least one variable reference voltage generating unit that generates a base reference voltage increased or decreased according to the variation in temperature, at least one level shifting unit that transforms the base reference voltage outputted by the at least one variable reference voltage generating unit into at least one prescribed reference voltage for generating internal voltage and outputs the transformed reference voltage, and at least one internal voltage generating unit that generates an internal voltage by using the at least one reference voltage for generating internal voltage outputted by the at least one level shifting unit.