Interposer Interconnect Density Layout for Stress-Resistant Packaging
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability due to issues such as potential destructive stress forces during fabrication and operation.
Innovation Solution
The semiconductor device design incorporates interconnectors of different densities between the package structure and dies, featuring cavities that neutralize and reduce these stress forces, allowing for more flexible design rules and improved yield and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If uniform density interconnectors are used between package structure and dies, then manufacturing process is simple, but design flexibility is limited and stress forces cannot be effectively managed
Solution Approach 1:
The patent applies local quality by varying the density of middle interconnectors based on their alignment with different dies. Specifically, middle interconnectors aligned with a first die have a first density, while those aligned with a second die have a second density different from the first density. This localized variation in interconnector density allows optimization for each die's specific requirements, improving design flexibility while managing stress forces effectively.
2Reliability
If traditional interconnector design is used, then structure is simple, but destructive stress forces during fabrication and operation cannot be neutralized
Solution Approach 1:
The patent converts the harmful stress forces into a beneficial effect by designing middle interconnectors with cavities. These cavities are specifically configured to neutralize and reduce the potential destructive stress forces that arise during fabrication and operation. By incorporating these cavities, the structure transforms the harmful stress into a controlled feature that actually protects the device, thereby improving reliability.
Solution Approach 2:
The patent applies parameter changes by modifying the physical structure of interconnectors to include cavities with specific dimensions and configurations. The middle interconnectors contain cavities that alter their mechanical properties, enabling them to better manage stress forces. This structural parameter change allows the interconnectors to neutralize destructive stresses while maintaining electrical connectivity.
3Productivity
If scaling down is pursued to improve computing ability, then device performance increases, but quality, yield, and reliability deteriorate due to increasing issues
Solution Approach 1:
The patent applies local quality by implementing different interconnector densities for different die alignments. This localized optimization allows the device to maintain high performance through scaling while improving reliability in specific critical areas. By tailoring the interconnector density to each die's requirements, the patent addresses quality and yield issues that typically arise during scaling down.
Solution Approach 2:
The patent converts the harmful stress forces that become more problematic during scaling into a beneficial protective feature. The cavities in the middle interconnectors are specifically designed to neutralize these stress forces, transforming the scaling-induced mechanical problems into an opportunity for improved device quality and yield through stress management.
Data Source
AI summary
The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors topographically aligned with the first die include a first density. The plurality of middle interconnectors topographically aligned with the second die include a second density different from the first density.