Interposer Die Interconnect With Thermal Management for Stacked Packages
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Solution Overview
Problem
The manufacturing of through-silicon vias (TSVs) is challenging due to process variations, and traditional thermal spreaders are inadequate for managing heat in high-power density microelectronic packages.
Innovation Solution
The system employs an interposer with a thermal management layer and an interconnect header, which includes a plurality of interconnect filaments, to facilitate electrical connections and heat dissipation in stacked microelectronic packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) are used to establish interconnects, then electrical connection through bulk silicon is achieved, but manufacturing difficulty increases due to process variations and availability constraints
Solution Approach 1:
An interposer structure is introduced as an intermediary component between stacked integrated circuit dies. The interposer includes attachment layers that bond to the dies and redistribution layers that provide the through-interconnect functionality, replacing the need for difficult TSV manufacturing while maintaining reliable electrical connections through the stack.
Solution Approach 2:
The interposer is divided into functional segments including a first attachment layer for bonding to dies, a second attachment layer for bonding to another die or substrate, and redistribution layers for electrical routing. This segmentation allows each layer to be optimized independently for its specific function, simplifying manufacturing compared to monolithic TSV structures.
2Power
If logic density is increased to accommodate higher processing performance, then processing performance improves, but heat generation increases requiring more effective thermal management
Solution Approach 1:
The interposer structure serves multiple functions simultaneously: it provides electrical interconnects between stacked dies through the redistribution layers and attachment layers, and it provides thermal management through the thermal spreader layer that conducts heat away from the high-density logic components.
Solution Approach 2:
The thermal spreader layer within the interposer acts as a thermal intermediary, conducting heat away from the high-power-density integrated circuit dies and distributing it to external heat sinks or cooling mechanisms, thereby managing the temperature increase resulting from higher logic density.
3Temperature
If traditional thermal spreaders are used to funnel heat away, then some heat management is achieved, but effectiveness is insufficient for high-power density microelectronic packages
Solution Approach 1:
The interposer incorporates a thermal spreader layer made of materials with high thermal conductivity, such as diamond or copper, integrated with the attachment and redistribution layers. This composite structure provides superior thermal management capability compared to traditional thermal spreaders, enabling effective heat dissipation in high-power-density packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient electrical interconnects and effective heat management, reducing manufacturing complexities and improving the performance of high-power density microelectronic packages.
Implementation Method 1
the interposer further includes at least one of a thermal spreader layer or a thermal management layer
Implementation Method 2
an interconnect header disposed within the interposer cavity comprising a plurality of interconnect filaments configured to electrically couple to at least one of the first interposer redistribution layer or the second interposer
Data Source
AI summary
An electronic assembly is disclosed. The electronic assembly includes a first attachment layer, a second attachment layer, a first interposer redistribution layer, a second interposer redistribution layer, at least one of a thermal spreader layer or a thermal management layer, and an interposer cavity. The interposer further includes an interconnect header fixed within the interposer cavity comprising a plurality of interconnect filaments configured to electrically couple to at least one of the first interposer redistribution layer or the second interposer redistribution layer. The interconnect header is generated by applying electrically conductive filaments on a plurality of wafers, thinning the wafers, stacking the wafers, attaching the wafers into a wafer stack, and dicing the wafer stack.