Interposer Frame Vertical Interconnect for Semiconductor Die
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Solution Overview
Problem
There is a need for a vertical interconnect arrangement that can accommodate semiconductor devices with dissimilar input/output (I/O) requirements, particularly for high-performance devices requiring high I/O count and vertical interconnect capability, while also considering the specific interconnect needs of each level in stacked semiconductor devices.
Innovation Solution
The solution involves a semiconductor device comprising an interposer frame with a die opening, where a first semiconductor die is disposed within or adjacent to the interposer, and interconnect structures are formed between the die and the interposer, as well as over the die, using bumps and bond wires to facilitate z-direction vertical electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional fan-out wafer level chip scale package is used, then manufacturing process is simplified, but vertical interconnect capability and heat dissipation are insufficient for high-performance devices
Solution Approach 1:
The semiconductor device is divided into multiple semiconductor dies stacked vertically, with each die having its own substrate. This segmentation allows each die to be optimized independently while achieving high vertical interconnect capability through the stacking arrangement, resolving the contradiction between reliability and complexity.
Solution Approach 2:
Multiple semiconductor dies are nested vertically one above another, with lower dies supporting upper dies. This nesting structure enables high vertical interconnect density and improved heat dissipation from lower to upper dies, while maintaining a compact overall form factor that doesn't excessively increase packaging complexity.
2Adaptability or versatility
If semiconductor dies are stacked vertically, then I/O count and vertical interconnect capability increase, but manufacturing precision requirements increase
Solution Approach 1:
Electrode patterns are pre-formed on the substrates before die stacking. This preliminary action allows for precise alignment features to be built in advance, reducing the precision requirements during the actual die stacking process while maintaining high I/O count capability through the pre-configured electrode arrangements.
Solution Approach 2:
Substrates serve as intermediaries between stacked semiconductor dies, providing mechanical support and electrical interconnection. The substrates with pre-formed electrodes act as mediators that facilitate alignment and reduce the direct precision requirements between adjacent dies, enabling higher I/O counts with manageable manufacturing precision.
3Reliability
If multiple interconnect structures are formed, then vertical electrical connections are improved, but device complexity increases
Solution Approach 1:
The substrates serve multiple functions: mechanical support for the semiconductor dies, electrical interconnection through pre-formed electrodes, and alignment reference. This multi-functionality reduces the need for separate dedicated interconnect structures, improving electrical interconnect reliability while controlling overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient vertical interconnects for semiconductor devices with varying I/O needs, supporting high-performance applications by providing adequate heat dissipation and interconnect density, while also allowing for the stacking of dissimilar devices with tailored interconnect requirements.
Implementation Method 1
interconnect structures are formed between the first semiconductor die and interposer frame... using bumps and bond wires to facilitate z-direction vertical electrical connections
Data Source
AI summary
A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.