Interposer Galvanic Capacitor Layout for Compact Chip Isolation
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Solution Overview
Problem
The integration of galvanic isolation in semiconductor electronic devices is challenging due to chip area constraints and process complexities, necessitating an improved method for achieving effective galvanic isolation and integration.
Innovation Solution
The implementation of an electronic device comprising an interposer with a dielectric material and interconnect structure, where a galvanic capacitor with electrodes is coupled to an integrated circuit chip, and a molding material is used to space the chip from the capacitor, enabling efficient galvanic isolation while allowing signal and power transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If galvanic isolation is integrated in semiconductor electronic devices, then signal and power transfer between circuits is enabled while preventing direct current and high-speed alternating current transients, but chip area is consumed and process complexity increases
Solution Approach 1:
The galvanic capacitor is formed within the existing semiconductor device structure by creating first and second electrodes in different conductive type regions, nesting the isolation function inside the chip's existing layout rather than adding external components. This nesting approach enables galvanic isolation without proportionally increasing chip area.
Solution Approach 2:
The patent utilizes vertical dimension by forming electrodes at different depths within the semiconductor substrate and connecting them through vertical interconnect structures. This three-dimensional arrangement allows the galvanic capacitor to occupy less lateral chip area while maintaining effective isolation capacitance.
2Reliability
If galvanic isolation is integrated in semiconductor electronic devices, then signal and power transfer between circuits is enabled while preventing direct current and high-speed alternating current transients, but process complexity increases
Solution Approach 1:
The galvanic capacitor formation process is merged with the existing semiconductor fabrication工艺流程. The first and second electrodes are formed using the same doping, deposition, and etching processes already required for the transistor structures, combining multiple functions into a unified manufacturing process rather than adding separate isolation steps.
Solution Approach 2:
The same semiconductor regions serve multiple functions: the conductive type regions act as both transistor components and capacitor electrodes. The interconnect structures serve dual purposes of electrical connection and capacitor electrode formation, making the galvanic isolation function universal with the existing device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides cost-effective and compact galvanic isolation in semiconductor devices, overcoming the challenges of chip area constraints and process complexities, and enabling efficient signal and power transfer while preventing direct current and high-speed alternating current transients.
Implementation Method 1
A galvanic capacitor having a first electrode and a second electrode... preventing direct current and high-speed alternating current transients... while still enabling signal and power transfer between those two parts
Data Source
AI summary
An electronic device is provided, the device comprising an interposer including a dielectric material and an interconnect structure. An integrated circuit chip may be arranged over the interposer. A galvanic capacitor may be spaced from the integrated circuit chip. The galvanic capacitor having a first electrode and a second electrode. The first electrode of the galvanic capacitor may be coupled to the integrated circuit chip. A molding material may be arranged over the integrated circuit chip and the galvanic capacitor, whereby the integrated circuit chip may be spaced from the galvanic capacitor by at least a portion of the molding material.