Interposer Inductor Isolation Structure for RF Interference Damping

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Solution Overview

Problem

Radio-frequency interference between signals propagating through adjacent regions within an interposer hampers high frequency signal transmission in fan-out wafer-level packages, affecting the overall performance of semiconductor devices.

Innovation Solution

Incorporating inductor structures in the interposer as spiral-like metal line-via routing configurations between neighboring semiconductor dies to mitigate RF interference by shielding electromagnetic radiation through magnetic flux cancellation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If signals are transmitted through adjacent regions within an interposer, then high frequency signal transmission is achieved, but RF interference occurs between neighboring semiconductor dies

Engineering Contradiction:

Improvesignal transmission speedVSAvoidRF interference

Core Design Contradiction:

SpeedVSObject-affected harmful factors

Solution Approach 1:

An inductor structure is introduced as an intermediary element positioned between adjacent semiconductor dies on the interposer. This inductor acts as a mediator that blocks electromagnetic radiation from propagating between neighboring dies, thereby preventing RF interference while allowing signal transmission to proceed through the interposer architecture.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The inductor structure, which inherently possesses electromagnetic properties, is strategically placed to convert potential harmful electromagnetic radiation into a beneficial shielding effect. By utilizing the inductor's magnetic flux characteristics, the design transforms what could be sources of interference into a protective mechanism that cancels electromagnetic radiation between adjacent dies.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If inductor structures are added to the interposer to reduce RF interference, then signal integrity is improved, but device complexity increases

Engineering Contradiction:

Improvesignal integrityVSAvoidinterposer structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

Instead of implementing a comprehensive shielding solution across the entire interposer, the design applies inductor structures only in specific localized regions where RF interference occurs between adjacent semiconductor dies. This targeted approach maintains signal integrity in critical areas while avoiding unnecessary complexity in regions where interference is not an issue.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The inductor structures are designed with specific geometric parameters and material properties optimized for RF shielding performance. By carefully controlling parameters such as inductor geometry, size, and placement, the design achieves effective electromagnetic radiation cancellation with minimal additional complexity in the interposer structure.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The inductor structures effectively reduce RF interference, enhancing signal integrity and power integrity in high-frequency applications by damping and canceling electromagnetic radiation across redistribution wiring interconnects.

Implementation Method 1

mitigate RF interference by shielding electromagnetic radiation through magnetic flux cancellation

Methodology Applied

Scientific EffectMagnetic flux cancellation: Electromagnetic Induction

Implementation Method 2

damping and canceling electromagnetic radiation across redistribution wiring interconnects

Methodology Applied

Scientific EffectDamping: Damping

Data Source

PatentUS12538819B2Inductor RF isolation structure in an interposer and methods of forming the same

Publication Date: 2026.01.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.