Semiconductor Interposer Integration for High-Density Packaging
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in miniaturization, increased transistor density, and cost reduction, with existing methods like Multi-Chip-Module and Package-on-Package architectures experiencing mechanical stresses and reduced electrical connections, limiting yield and performance.
Innovation Solution
The development of semiconductor packages with interposers featuring cavities and standoff interposers to increase electronic component density, reduce footprint, and enhance cooling, utilizing through-substrate vias and redistribution layers for high-density and high-performance configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If 2D monolithic dies are integrated on an organic substrate assembled on a PCB, then electrical connections can be established, but mechanical stresses increase and yield decreases
Solution Approach 1:
The patent transitions from 2D integration on organic substrates to 2.5D integration using silicon interposers. The interposer provides a rigid, stress-resistant platform that maintains mechanical stability while enabling higher-density electrical connections through TSVs and redistribution layers, thereby improving yield without suffering from the mechanical stress issues of organic substrates.
Solution Approach 2:
The invention changes the material parameter from organic substrate to silicon interposer, and changes the connection architecture from wire bonds to TSVs and solder bumps. These parameter changes enable better mechanical stress distribution and higher reliability while maintaining electrical connectivity.
2Length of stationary object
If Package-on-Package architecture is used to reduce profile, then clearance is provided, but the number of electrical connections between substrates is reduced
Solution Approach 1:
The patent implements 2.5D integration where multiple dies are mounted on the same silicon interposer plane rather than stacking packages vertically. This dimensional change allows numerous electrical connections to be made simultaneously through the interposer's redistribution layers and TSVs while maintaining a low profile, thus increasing connection count without increasing package height.
Solution Approach 2:
The silicon interposer serves multiple functions: providing mechanical support, enabling electrical connections between multiple dies, offering thermal management pathways, and facilitating signal redistribution. This multi-functionality allows the interposer to maintain low profile while supporting high-density connections that would otherwise require multiple stacked packages.
3Reliability
If through-substrate vias and redistribution layers are used in interposers, then electrical connections are enhanced, but device complexity increases
Solution Approach 1:
The interposer structure is segmented into distinct functional layers: TSVs for vertical connections, redistribution layers for signal routing, and bonding interfaces for die attachment. This segmentation allows each component to be optimized independently and manufactured using standard semiconductor processes, reducing overall complexity despite the advanced functionality.
Solution Approach 2:
The invention uses standard semiconductor manufacturing parameters and materials (silicon, copper, solder) to create the interposer structure. By changing from organic substrate materials to silicon-based materials with well-established fabrication processes, the complexity is managed through proven manufacturing techniques rather than novel processes.
Data Source
AI summary
An electronic package comprising a first substrate; a second substrate; at least one standoff substrate positioned between the first substrate and the second substrate, wherein the at least one standoff substrate is affixed to each of the first substrate and the second substrate, wherein the at least one standoff substrate forms a clearance between the first substrate and the second substrate, and wherein the at least one standoff substrate comprises an intervening plurality of through-substrate vias passing through the entire thickness of the at least one standoff substrate, and wherein a portion of the second plurality of through-substrate vias are electrically connected to a portion of the first through-substrate vias by way of a portion of the intervening through-substrate vias; and at least three electronic components located within the clearance.