Interposer Isolation Trenches for Deep Trench Capacitor Arrays
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor packaging technologies using deep trench capacitors in interposers face significant parasitic capacitance issues, leading to interference with adjacent devices due to the lack of isolation structures, which compromises electrical performance.
Innovation Solution
A semiconductor structure with an interposer that includes a deep trench capacitor array surrounded by an isolation structure, formed through a manufacturing method involving multiple etching steps to create an isolation trench and fill it with isolation material, reducing parasitic capacitance and interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If deep trench capacitors are disposed in the interposer as a decoupling capacitor, then signal noise and leakage between adjacent semiconductor devices are reduced, but parasitic capacitance between the deep trench capacitor and another device on the interposer increases, causing interference to the another device
Solution Approach 1:
The patent segments the interposer structure by introducing isolation trenches that divide the interposer into separate regions. These trenches physically separate the deep trench capacitors from other semiconductor devices, thereby reducing parasitic capacitance while maintaining the noise reduction function of the capacitors.
Solution Approach 2:
The isolation trenches act as intermediary structures between the deep trench capacitors and other devices on the interposer. By introducing this intermediate isolation layer, the patent reduces the direct electrical interaction and parasitic capacitance between capacitors and adjacent devices while preserving the decoupling function.
2Reliability
If deep trench capacitors are disposed in the interposer as a decoupling capacitor, then signal noise and leakage between adjacent semiconductor devices are reduced, but interference to another device on the interposer increases
Solution Approach 1:
The isolation trenches segment the interposer into distinct functional regions, separating the capacitor array from other devices. This spatial segmentation reduces electromagnetic interference and crosstalk between adjacent devices while maintaining the noise filtering capability of the decoupling capacitors.
Solution Approach 2:
The isolation trenches serve as intermediary barrier structures that reduce interference propagation between the deep trench capacitors and adjacent semiconductor devices. These trenches act as electromagnetic shields and isolation barriers, minimizing harmful interference while preserving the beneficial decoupling effect.
3Object-generated harmful factors
If isolation structure is introduced to reduce parasitic capacitance, then interference to adjacent devices is reduced, but device complexity increases
Solution Approach 1:
The isolation trenches are strategically positioned only in critical areas where parasitic capacitance and interference are most significant, rather than uniformly across the entire interposer. This localized approach reduces parasitic effects where needed while minimizing the overall addition to structural complexity.
Solution Approach 2:
The patent optimizes parameters such as the width, depth, and spacing of the isolation trenches to achieve effective parasitic capacitance reduction with minimal impact on overall device complexity. By carefully controlling these geometric parameters, the isolation structures provide maximum benefit with minimum added complexity.
Data Source
AI summary
A semiconductor structure and a manufacturing method therefor are disclosed. The semiconductor structure includes an interposer, where the interposer includes a deep trench capacitor array and an isolation structure. The deep trench capacitor array includes multiple deep trench capacitors, and the isolation structure at least partially surrounds a deep trench capacitor on the outmost edge side of the deep trench capacitor array.