Interposer Line-on-Via Structures for Dense Package Interconnects
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving high interconnect density and efficient electrical connections, particularly due to stress-induced warping of package substrates and issues with solder mounting.
Innovation Solution
The development of an interposer with increased interconnect density, featuring a first electrically conducting line structure and an electrically conducting via structure that are electrically connected and partially surround each other, allowing for a combined spatial extent that matches the via thickness and width, thereby enhancing vertical and horizontal interconnect density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional separate via and line structures are used, then manufacturing is simpler, but interconnect density is lower
Solution Approach 1:
The patent merges the via structure and line structure into a single integrated interconnect structure. The via structure includes a via hole, via fill, and cap structure, while the line structure includes a line hole and line fill, all formed as one monolithic structure through simultaneous etching and filling processes. This integration increases interconnect density by eliminating the need for separate via and line formations, directly resolving the technical contradiction between higher interconnect density and structural complexity.
Solution Approach 2:
The patent implements a nested configuration where the line structure is positioned within or adjacent to the via structure, with the line fill partially surrounding the via fill or vice versa. This nesting arrangement allows both interconnect elements to occupy overlapping or adjacent spatial volumes, thereby increasing the effective interconnect density without proportionally increasing the overall device footprint or manufacturing complexity.
2Reliability
If interconnect density is increased, then electrical connection efficiency is improved, but stress-induced warping increases
Solution Approach 1:
The patent applies local quality by providing different structural characteristics in different regions of the interconnect structure. The cap structure selectively covers portions of the via fill while leaving other portions exposed or covered by different materials. This localized differentiation allows for optimized stress distribution in specific areas, mitigating warping effects while maintaining high interconnect density in critical regions.
Solution Approach 2:
The patent employs composite material structures combining multiple materials with different mechanical and electrical properties. The interconnect structure includes conductive fill materials, dielectric materials, and cap structures made from different substances. This composite approach enables tailored mechanical properties that reduce stress-induced warping while maintaining electrical connection efficiency, directly addressing the contradiction between reliability and substrate stability.
3Productivity
If via and line structures are formed separately, then manufacturing precision is easier to control, but production time increases
Solution Approach 1:
The patent implements preliminary action by pre-defining the complete interconnect structure geometry before the final formation process. The monolithic structure is designed with predetermined via holes, line holes, fill regions, and cap structures that are all formed in a single coordinated process sequence. This preliminary design approach enables simultaneous formation of all interconnect elements, increasing production speed while maintaining precision through controlled process parameters established in advance.
Solution Approach 2:
The patent uses the cap structure as an intermediary element that serves multiple functions: it protects the via fill during subsequent processing, defines the final interconnect geometry, and facilitates the simultaneous formation of via and line structures. This intermediary cap structure acts as a template or guide that ensures precise positioning and dimensional control of all interconnect elements during the single-step formation process, thereby maintaining manufacturing precision while accelerating production.
Data Source
AI summary
An embodiment interposer includes a first electrically conducting line structure, an electrically conducting via structure that is electrically connected to the first electrically conducting line structure, and a second electrically conducting line structure formed along with the electrically conducting via structure as a monolithic structure. In some embodiments, a portion of the first electrically conducting line structure may be provided within the electrically conducting via structure such that the first electrically conducting line structure is at least partially overlapping with the electrically conducting via structure such that the first electrically conducting line structure and the electrically conducting via structure share a common surface. In other embodiments, the interposer may further include a via land structure electrically connected to the first electrically conducting line structure. In some embodiments, the via land structure may have an elongated structure having a land width that is smaller than a land length.