Interposer Memory Stack Buffer Layout for Higher Data Rates
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Solution Overview
Problem
Current semiconductor packages face challenges in achieving high electrical characteristics and increased operating speed while maintaining compact size and high performance, particularly in integrating logic and memory stack structures effectively.
Innovation Solution
A semiconductor package design featuring a logic die on an interposer substrate with a memory stack structure, where the buffer die has a higher number of data terminals on its surface facing the memory dies compared to connection terminals on its surface facing the interposer substrate, allowing for efficient data exchange and improved data rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a memory stack structure with multiple memory dies is integrated adjacent to a logic die on an interposer substrate, then data transmission efficiency and operating speed are improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The semiconductor package is divided into distinct functional modules: a logic die, a buffer die, and multiple memory dies stacked vertically. This segmentation allows each component to be optimized independently while maintaining high-speed data transmission through dedicated bump connections, resolving the contradiction between improved speed and increased device complexity.
Solution Approach 2:
The patent transitions from a traditional planar arrangement to a three-dimensional stacked architecture where memory dies are vertically stacked above the buffer die. This dimensional change enables higher data transmission capacity and operating speed without proportionally increasing the footprint complexity, as data paths are established through vertical bump connections rather than lateral routing.
2Productivity
If the number of data terminals on the second surface of the buffer die is increased to improve data transmission capacity, then data rates are improved, but the number of bumps required between buffer die and memory dies increases
Solution Approach 1:
Multiple data terminals are merged into a single buffer die interface, which then connects to multiple memory dies through shared bump connections. This merging approach allows high data transmission capacity to be achieved without a proportional increase in the total number of bumps, as the buffer die acts as a consolidation point for data paths.
Solution Approach 2:
The buffer die serves as an intermediary component between the logic die and the stacked memory dies. It provides a centralized interface that manages data transmission to multiple memory dies, allowing high data rates to be achieved through optimized buffer architecture rather than through individual direct connections from logic to each memory die, thereby reducing the total bump count.
3Reliability
If a buffer die is introduced between the logic die and memory dies to optimize data transmission, then electrical characteristics are improved, but the device complexity and number of components increase
Solution Approach 1:
The buffer die performs multiple functions: it serves as an electrical interface between the logic die and memory dies, provides signal buffering and conditioning, and manages data distribution to multiple stacked memory dies. This multi-functionality justifies the additional component by delivering significant improvements in electrical characteristics and data transmission efficiency that would require multiple separate components to achieve otherwise.
Data Source
AI summary
Disclosed is a semiconductor package comprising a logic die mounted on an interposer substrate, and a memory stack structure disposed side-by-side with the logic die. The memory stack structure includes a buffer die mounted on the interposer substrate, and a plurality of memory dies stacked on the buffer die. The buffer die has a first surface that faces the interposer substrate and a second surface that faces the plurality of memory dies. The number of data terminals on the second surface is greater the number of connection terminals on the first surface.