Interposer Structure With Integrated MIM Capacitor
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Solution Overview
Problem
As semiconductor devices become more highly integrated and require higher capacitance, existing capacitor designs face challenges in maintaining or increasing capacitance while minimizing area, particularly in MIM capacitors with high dielectric constant materials.
Innovation Solution
An interposer structure is developed with a capacitor structure integrated into an interlayer insulating film, featuring a lower electrode, a high-k dielectric film, and an upper electrode, connected to wiring patterns via penetration vias, allowing for improved capacitance while maintaining a compact design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the degree of integration increases, then the area occupied by the device decreases, but the capacitance required for the capacitor must be maintained or increased
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional vertical capacitor structures by forming electrodes and dielectric films in multiple stacked layers. This vertical stacking allows the capacitor to utilize the third dimension (height) for capacitance accumulation, thereby maintaining or increasing capacitance while reducing the horizontal area occupied on the substrate.
Solution Approach 2:
The patent implements nested capacitor structures where multiple capacitor elements are stacked vertically within each other, similar to nested dolls. Each capacitor layer contains electrodes and dielectric films that are positioned above and below previous layers, allowing multiple capacitance contributions within a compact vertical footprint, thus increasing total capacitance without proportionally increasing device area.
2Quantity of substance
If a high dielectric constant material is used as a dielectric film, then the capacitance increases, but the process complexity increases
Solution Approach 1:
The patent combines the formation of multiple capacitor layers with the existing interlayer insulating film structure of the semiconductor device. The dielectric films and electrodes are integrated into the interlayer insulating layers, merging capacitor fabrication with the standard multi-layer interconnect process. This integration reduces overall process complexity by utilizing existing process steps and materials rather than adding separate capacitor fabrication sequences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The interposer structure enhances capacitance without increasing the device's area, facilitating higher integration and performance in semiconductor packages through a simplified fabrication process.
Implementation Method 1
a capacitor dielectric film between the upper electrode and the lower electrode
Data Source
AI summary
Provided is an interposer structure. The interposer structure comprises an interposer substrate, an interlayer insulating film which covers a top surface of the interposer substrate, a capacitor structure in the interlayer insulating film and a wiring structure including a first wiring pattern and a second wiring pattern spaced apart from the first wiring pattern, on the interlayer insulating film, wherein the capacitor structure includes an upper electrode connected to the first wiring pattern, a lower electrode connected to the second wiring pattern, and a capacitor dielectric film between the upper electrode and the lower electrode.