Interposer Substrate Manufacturing Using Molded Conductive Pillars
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Solution Overview
Problem
The semiconductor industry faces high manufacturing costs due to the need for repeated costly process steps to achieve optimal through-silicon vias (TSV) and redistribution layer (RDL) dimension ratios in 3D stacking technology, which complicates the reduction of device sizes and wiring between chips.
Innovation Solution
A manufacturing method using a mould with protrusions to form an interposer substrate with blind holes and conductive pillars, where a thermosetting material is injected, cured, and separated to create an interposer substrate with conductive pillars, eliminating the need for etching or laser processes and simplifying the manufacturing procedure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional wire packaging technique and repeated semiconductor process steps are used to achieve optimal TSV and RDL dimension ratios, then electrical connection between heterogeneous chips can be realized, but manufacturing cost increases significantly
Solution Approach 1:
The patent uses a mould that replicates the desired interposer substrate structure with pre-formed blind holes and conductive pillars. The mould creates a copy of the final structure directly, eliminating the need for repeated costly semiconductor process steps to achieve optimal TSV and RDL dimension ratios, while maintaining reliable electrical connections between heterogeneous chips
Solution Approach 2:
The mould is pre-configured with blind holes and conductive pillars in their final positions and dimensions before the manufacturing process begins. This preliminary preparation of the mould structure allows the interposer substrate to be formed in a single injection molding step, avoiding repeated process steps and reducing manufacturing cost while ensuring optimal dimensional ratios for electrical connection
2Manufacturing precision
If repeated costly semiconductor process steps are performed to achieve optimal TSV and RDL dimension ratios, then through-silicon vias and redistribution layers can be formed, but device size reduction and wiring between chips become more complex
Solution Approach 1:
The patent combines multiple manufacturing steps into a single injection molding process. The mould integrates blind holes and conductive pillars formation, interposer substrate creation, and structural definition into one operation, achieving optimal TSV and RDL dimension ratios without repeated process steps, thereby reducing manufacturing process complexity while maintaining precision
Solution Approach 2:
The mould directly copies the final interposer substrate structure with precisely positioned blind holes and conductive pillars in a single step. This copying approach achieves optimal dimensional ratios for TSV and RDL without requiring multiple repeated semiconductor process steps, simplifying the overall manufacturing process while maintaining high manufacturing precision
3Manufacturing precision
If etching or laser processes are used to form blind holes and define interposer substrate shape, then precise structural definition can be achieved, but manufacturing cost increases
Solution Approach 1:
The mould is pre-configured with the exact shape, blind hole positions, and conductive pillar locations before the manufacturing process. This preliminary preparation allows the interposer substrate to be formed with precise structural definition directly during injection molding, eliminating the need for subsequent etching or laser processes and reducing manufacturing cost while maintaining precision
Solution Approach 2:
The mould creates a direct copy of the final interposer substrate structure including blind holes and conductive pillars in their precise final positions. This copying method achieves accurate shape definition without requiring additional etching or laser processes, reducing manufacturing cost while maintaining high manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces manufacturing costs by simplifying the process and allowing for the definition of interposer substrate shape and conductive pillar positions without requiring etching or laser processes, thereby lowering the overall production expenses.
Implementation Method 1
The thermosetting material is cured
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes following steps. A mold is provided. The mold has a chamber and a plurality of protrusions in the chamber. A thermosetting material is injected into the chamber. The thermosetting material is cured. A parting step is performed to separate the cured thermosetting material from the mold, so as to form an interposer substrate. A plurality of blind holes corresponding to the protrusions is formed on the interposer substrate. A conductive material is filled into the blind holes to form a plurality of conductive pillars. A conductive pattern layer is formed on a surface of the interposer substrate. The conductive pattern layer is electrically connected with the conductive pillars.