Interposer Nanostructure Energy Storage for Decoupling
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Solution Overview
Problem
Current interposer technologies face limitations in compact local energy storage and decoupling, with silicon-based capacitors being constrained by density, parasitic resistances, and manufacturing complexity, while also inducing stress and increasing costs, and there is a need for improved control over interposer thickness and reduced film stress.
Innovation Solution
An interposer device with nanostructure energy storage devices, comprising conductive nanostructures and a conduction controlling material, integrated within the interposer to provide efficient energy storage and decoupling capabilities, allowing for compact and cost-effective energy storage without the need for external components, and enabling tailored capacitance and geometrical profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If silicon-based capacitors are used for energy storage in interposers, then energy storage capacity is provided, but density is limited and parasitic resistances increase
Solution Approach 1:
The patent changes the physical state and dimensional parameters by transitioning from bulk silicon-based capacitors to nanostructured energy storage elements. This dimensional reduction to nanoscale enables significantly higher energy storage density while reducing parasitic resistances through the unique electrical properties of nanostructures, directly resolving the contradiction between storage capacity and parasitic effects.
Solution Approach 2:
The patent utilizes porous or nanosstructured materials for energy storage, where the high surface-area-to-volume ratio of porous nanostructures provides increased capacitance per unit volume. This porous nanostructure approach enables higher energy storage capacity without proportionally increasing parasitic resistances, as the conductive pathways are optimized at the nanoscale.
2Quantity of substance
If silicon-based capacitors are integrated in interposers, then energy storage is achieved, but manufacturing complexity and costs increase
Solution Approach 1:
The patent makes the interposer substrate multi-functional by integrating energy storage capability directly into the interposer structure itself. The interposer simultaneously provides mechanical support, electrical interconnection, and energy storage functions, eliminating the need for separate capacitor components and reducing manufacturing complexity while maintaining high energy storage capacity.
Solution Approach 2:
The patent merges the energy storage function with the interposer substrate by integrating nanostructured energy storage elements directly into the interposer architecture. This consolidation combines multiple functions (interconnection + energy storage) into a single integrated component, simplifying the overall device structure and manufacturing process.
3Quantity of substance
If silicon-based capacitors are used, then energy storage is provided, but stress and film stress increase
Solution Approach 1:
The patent changes the dimensional parameters by transitioning from bulk to nanostructured energy storage elements. This nanoscale dimension reduction fundamentally alters the mechanical properties, enabling high energy storage capacity with minimal induced stress and film stress, as nanostructures have different mechanical behavior compared to bulk materials.
4Quantity of substance
If conventional capacitors are used, then energy storage is achieved, but area footprint is large
Solution Approach 1:
The patent employs porous nanostructured materials for energy storage, where the high surface area within a compact volume provides increased capacitance density. This porous nanostructure approach enables significant energy storage capacity to be achieved within a minimal area footprint, as the three-dimensional porous structure maximizes storage volume efficiency.
Solution Approach 2:
The patent transitions from two-dimensional planar capacitor structures to three-dimensional nanostructured energy storage elements. This dimensional change enables much higher energy storage capacity per unit area by utilizing vertical and three-dimensional space within the nanostructures, dramatically reducing the area footprint required for a given energy storage capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The interposer device achieves significant energy storage capacity with minimal added area, reduces stress and processing complexity, and allows for flexible design and scalable production, enhancing the performance and reliability of integrated circuits by providing localized energy storage and improved signal integrity.
Implementation Method 1
a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element, each of the nanostructure energy storage devices comprising: at least a first plurality of conductive nanostructures
Data Source
AI summary
An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.