Interposer Package Stacking With Through-Insulator Vias

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving high-density integration and efficient interconnects due to limitations in reducing feature size and packaging size, which hinders the development of advanced three-dimensional integration technologies for wafer-level packaging.

Innovation Solution

A manufacturing method involving the formation of an interposer with multiple metal layers and an insulating structure, where a core substrate is layered with conductive and insulating materials, and through holes are filled with insulating material, enabling electrical connections and encapsulation of semiconductor dies, followed by a redistribution layer for efficient packaging and stacking of packages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If feature size is reduced to increase integration density, then more electronic components can be integrated into a given area, but manufacturing precision requirements increase and production costs rise

Engineering Contradiction:
Improveintegration densityVSAvoidminimum feature size
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent transitions from two-dimensional planar integration to three-dimensional vertical integration through wafer-level packaging and stacked package structures. Multiple semiconductor wafers are bonded together in vertical layers, achieving high integration density without further reducing lateral feature sizes. This dimensional shift allows continued scaling while maintaining manufacturable feature dimensions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nested packaging structures where smaller packages are integrated within larger package assemblies. Multiple semiconductor dies and interposer structures are nested within encapsulant materials, creating compact hierarchical arrangements that maximize component density while simplifying individual component manufacturing requirements.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of stationary object

If package size is reduced to accommodate smaller components, then area utilization improves, but packaging complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvepackage areaVSAvoidpackaging structure
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent moves packaging from a single-plane layout to multi-layer vertical stacking. Packages are arranged in stacked configurations along the vertical axis, dramatically reducing the footprint area while distributing complexity across multiple manageable layers rather than compressing everything into a single crowded plane.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the packaging system into discrete modular layers including semiconductor wafers, interposer structures, encapsulant materials, and redistribution layers. Each layer can be manufactured and prepared independently, then bonded together, which simplifies the manufacturing process compared to creating a single complex integrated structure.

Inventive Principle:
Principle #1Segmentation

3Quantity of substance

If three-dimensional integration technology is implemented to achieve high-density packaging, then integration capacity increases, but manufacturing process complexity and production costs increase

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing process
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent performs preliminary preparation of semiconductor wafers, interposer structures, and encapsulant materials before final assembly. Redistribution layers are pre-formed on interposers, and bonding interfaces are prepared in advance, allowing the actual stacking and bonding process to proceed more efficiently with reduced on-site complexity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces interposer structures as intermediary components between semiconductor dies and external connections. These interposers provide redistribution layers and mechanical support, simplifying the bonding process and enabling flexible routing of electrical connections without requiring direct complex interconnections between all components.

Inventive Principle:
Principle #24Intermediary (Mediator)

4Reliability

If heterogeneous integration is pursued for high-performance interconnects, then system performance improves, but manufacturing adaptability and process flexibility requirements increase

Engineering Contradiction:
Improveinterconnect performanceVSAvoidmanufacturing flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent creates a universal packaging platform using standard wafer-level processes and common encapsulant materials that can accommodate different types of semiconductor devices. The interposer structures provide universal bonding interfaces and redistribution capabilities that work with various die types, enabling heterogeneous integration without requiring entirely separate manufacturing lines for each device combination.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11776905B2Package structure, package-on-package structure and manufacturing method thereof
Publication Date: 2023.10.03 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11776905B2 patent drawing
  • US11776905B2 patent drawing
  • US11776905B2 patent drawing

AI summary

A package structure including an interposer, a semiconductor die, through insulator vias, an insulating encapsulant and a redistribution layer is provided. The interposer includes a core structure having a first and second surface, first metal layers disposed on the first and second surface, second metal layers disposed on the second surface over the first metal layers, and third metal layers disposed on the second surface over the second metal layers. The semiconductor die is disposed on the interposer. The through insulator vias are disposed on the interposer and electrically connected to the plurality of first metal layers. The insulating encapsulant is disposed on the interposer over the first surface and encapsulating the semiconductor die and the plurality of through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the semiconductor die and the plurality of through insulator vias.