Interposer Redistribution Structure for High-Frequency PoP Integrity
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and improved signal/power integrity in semiconductor devices, particularly in Package-on-Package (PoP) technology, due to the limitations of existing packaging techniques.
Innovation Solution
The use of an interposer with metallization layers in organic insulating layers, combined with damascene processes, to form improved signal and power integrity at high operating frequencies, and the integration of metallization patterns in both organic and inorganic insulating materials for enhanced flexibility in processing and packaging design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional packaging techniques are used, then manufacturing simplicity is maintained, but signal and power integrity deteriorate at high operating frequencies
Solution Approach 1:
An interposer is introduced as an intermediary component between the semiconductor die and the substrate. The interposer includes a first redistribution structure with organic insulating material and a second redistribution structure with inorganic insulating material, which mediates the electrical connection and improves signal/power integrity by providing controlled impedance pathways and reducing interference.
Solution Approach 2:
The patent employs composite insulating structures combining organic and inorganic materials. The first redistribution structure uses organic insulating material while the second uses inorganic insulating material, creating a composite packaging structure that leverages the complementary properties of both material types to achieve superior electrical performance at high frequencies.
2Productivity
If integration density is increased through PoP technology, then component density improves, but manufacturing precision requirements worsen
Solution Approach 1:
The interposer is prepared in advance with pre-formed first and second redistribution structures before the semiconductor die is mounted. The organic insulating material is deposited and patterned, followed by inorganic insulating material formation, creating pre-configured electrical pathways that simplify subsequent assembly and reduce alignment requirements during die attachment.
3Reliability
If known good die selection is implemented, then product reliability improves, but manufacturing time increases
Solution Approach 1:
The interposer structure with its dual redistribution layers is constructed beforehand, allowing for pre-validation of electrical pathways. This preliminary formation of the complete electrical interconnection structure enables more efficient die attachment and reduces the need for post-assembly adjustments, thereby minimizing time loss while ensuring reliability.
Data Source
AI summary
A device package including an interposer. The interposer comprising: a semiconductor substrate; first through vias extending through the semiconductor substrate; an interconnect structure comprising: a first metallization pattern in an inorganic insulating material; and a passivation film over the first metallization pattern; and a first redistribution structure over the passivation film. The first redistribution structure comprising a second metallization pattern in an organic insulating material. The device package further including an integrated circuit die over and attached to the interposer; and a first encapsulant around the integrated circuit die.