Interposer Layer Warpage Mitigation via Stress Release Structures
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Solution Overview
Problem
Conventional semiconductor devices with interposer layers face issues due to varying coefficients of expansion between active and open regions, leading to unbalanced force tensors and permanent warpage or deformation during fabrication processes.
Innovation Solution
The semiconductor device incorporates interposer layers with a stress release structure featuring openings in the open region and a device layout pattern in the active region, along with a stiffener film on the surface of the interposer layers, to mitigate expansion variations and provide mechanical support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If interposer layers are used with active and open regions, then device connectivity and insulation are achieved, but warpage and deformation occur due to different coefficients of expansion
Solution Approach 1:
The patent applies local quality by forming a stress release structure specifically in the open region of the interposer layer, while maintaining the device layout pattern in the active region. This localized structural modification allows the open region to have different mechanical properties (reduced stress) compared to the active region, thereby compensating for the differential thermal expansion without affecting the connectivity function in the active region.
Solution Approach 2:
The interposer layer is segmented into distinct functional regions: an active region containing device layout patterns for connectivity, and an open region containing stress release structures. This segmentation allows each region to be optimized independently - the active region maintains electrical connectivity while the open region provides stress relief through its specialized structure.
2Ease of manufacture
If conventional interposer layer structures are used, then fabrication is simplified, but unbalanced force tensors cause permanent deformation
Solution Approach 1:
The stress release structure is formed preliminarily during the interposer layer fabrication process, before final device assembly. By pre-configuring the stress release structure in the open region, the interposer layer is prepared in advance to withstand thermal expansion forces during subsequent fabrication and operation, preventing permanent deformation without requiring additional corrective steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces warpage and deformation by balancing expansion coefficients and enhancing mechanical stability, effectively addressing the structural inconveniences and defects in conventional semiconductor devices.
Implementation Method 1
variations of the different coefficients of expansion in different regions on the interposer layers may induce unbalance, anisotropic force tensors on the interposer layers
Implementation Method 2
a stiffener film on the surface of the interposer layers, to mitigate expansion variations and provide mechanical support
Data Source
AI summary
A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, are respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.