Low Profile Interposer with Stud Structure for Thermal Management

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Solution Overview

Problem

Existing three-dimensional integrated circuit packaging techniques, such as Package-on-Package (PoP), face challenges in reducing the size and improving heat dissipation while maintaining electrical connectivity and stress distribution.

Innovation Solution

A low profile interposer with studs and contact pad structures is used between the top package and the printed circuit board, featuring a silicon substrate with metallization layers for improved thermal conductivity and reduced vertical profile, along with wire bonding and flip-chip bonding processes to form studs and secure the top package, allowing for better heat dissipation and reduced voltage drop.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional PoP packaging techniques are used, then electrical connectivity between packages is achieved, but the vertical profile remains large and heat dissipation is insufficient

Engineering Contradiction:
Improveheat dissipationVSAvoidvertical profile
Core Design Contradiction:
TemperatureVSLength of stationary object

Solution Approach 1:

The patent changes the material parameter of the interposer from conventional organic substrates to silicon substrate, which has superior thermal conductivity. This parameter change enables improved heat dissipation from the top package while maintaining a reduced vertical profile, as silicon's inherent thermal properties allow heat to be conducted away more efficiently without requiring increased thickness

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure combining silicon substrate with metallization layers (such as copper or aluminum) to create an interposer that integrates both mechanical support and thermal management functions. The metallization layers enhance the thermal conductivity pathway, allowing efficient heat dissipation while maintaining a compact vertical profile

Inventive Principle:
Principle #40Composite materials

2Length of stationary object

If the interposer thickness is reduced to achieve smaller device size, then vertical profile is improved, but stress distribution and electrical connectivity may be compromised

Engineering Contradiction:
Improvevertical profileVSAvoidstress distribution
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

The patent applies local quality by incorporating studs at specific locations on the interposer where stress concentration and electrical connectivity are critical. These studs provide localized reinforcement and stress distribution points, allowing the interposer to maintain reduced thickness while ensuring reliable stress distribution and electrical connection at key interfaces between packages

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The studs act as intermediary elements between the interposer and the packages, providing a mechanical and electrical bridge that ensures reliable connectivity and stress distribution. These intermediary structures allow the thin interposer to maintain structural integrity and electrical functionality without compromising reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves a reduced vertical profile, improved heat dissipation, and better stress distribution, enabling smaller and more efficient semiconductor devices with enhanced electrical connectivity and reduced voltage drop.

Implementation Method 1

silicon substrate with metallization layers for improved thermal conductivity and reduced vertical profile

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

silicon substrate with metallization layers for improved thermal conductivity and reduced vertical profile

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS9165875B2Low profile interposer with stud structure
Publication Date: 2015.10.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9165875B2 patent drawing
  • US9165875B2 patent drawing
  • US9165875B2 patent drawing

AI summary

An interposer includes a substrate having a contact pad structure and a stud operably coupled to the contact pad structure. A solder ball is seated on the contact pad structure and formed around the stud. The stud is configured to regulate a collapse of the solder ball when a top package is mounted to the substrate.