Interposer Package Layout for TSV Off-Landing and Leakage Control
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving smaller and more creative packaging techniques for semiconductor dies as the demand for shrinking electronic devices increases, necessitating improved integration density and reduced off-landing risk of conductive vias during processing.
Innovation Solution
The integration of an encapsulated interconnection die with through-substrate vias and a redistribution structure, featuring oversized conductive vias and isolation layers around the through-substrate vias, reduces the risk of electric leakage and enhances performance by maintaining structural integrity and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional packaging techniques are used, then manufacturing simplicity is maintained, but integration density cannot be improved and off-landing risk increases
Solution Approach 1:
The interconnection die is divided into multiple package regions with different configurations, allowing each region to be optimized independently for specific functions while maintaining overall integration density improvements
Solution Approach 2:
The patent transitions from planar packaging to three-dimensional stacking with multiple dies connected through through-substrate vias, enabling vertical integration and significantly improving integration density without increasing footprint area
2Manufacturing precision
If smaller through-substrate vias are used to increase density, then integration density improves, but off-landing risk increases
Solution Approach 1:
Different regions of the interconnection die have different via configurations - some areas use smaller high-density vias while other areas use larger viaS for reliable landings, allowing optimization of both density and reliability in different locations
Solution Approach 2:
The redistribution structure acts as an intermediary between the through-substrate vias and the conductive vias, providing a transition layer that ensures reliable electrical connection even when via dimensions are reduced for higher density
3Reliability
If conductive vias are made oversized to reduce off-landing risk, then reliability improves, but electric leakage risk increases
Solution Approach 1:
The isolation layer extracts and removes the harmful effect of electric leakage by creating a dedicated insulating barrier that separates the oversized conductive via from the substrate, allowing the via to maintain its larger尺寸 for reliability without suffering from leakage problems
Data Source
AI summary
In an embodiment, a device includes: an interposer including: a back-side redistribution structure; an interconnection die over the back-side redistribution structure, the interconnection die including a substrate, a through-substrate via protruding from the substrate, and an isolation layer around the through-substrate via; a first encapsulant around the interconnection die, a surface of the first encapsulant being substantially coplanar with a surface of the isolation layer and a surface of the through-substrate via; and a front-side redistribution structure over the first encapsulant, the front-side redistribution structure including a first conductive via that physically contacts the through-substrate via, the isolation layer separating the first conductive via from the substrate.