Interposer Underfill Structure for Semiconductor Package Heat Dissipation
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving improved thermal characteristics and mechanical reliability, particularly due to the limitations of traditional underfill materials and structures in managing heat dissipation and mechanical stress.
Innovation Solution
The semiconductor package incorporates a unique underfill layer structure with a second underfill layer having a lateral side surface that does not contact the semiconductor devices or the interposer, extending between the interposer's top surface and the semiconductor devices' bottom surfaces. This design, combined with a mold member and a package underfill layer containing high thermal conductivity fillers like boron nitride or silica coated aluminum nitride, enhances thermal management and mechanical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional underfill materials and structures are used, then the package structure is simple, but thermal characteristics and heat dissipation are insufficient
Solution Approach 1:
The underfill layer is divided into multiple segments: a first underfill layer filling the gap between semiconductor devices, and a second underfill layer filling the gap between semiconductor devices and the interposer. This segmentation allows each layer to be optimized for specific thermal management functions, improving overall thermal characteristics while maintaining manageable structural complexity.
Solution Approach 2:
The underfill layers incorporate high thermal conductivity fillers such as boron nitride or silica-coated aluminum nitride particles within the polymer matrix. This composite material approach significantly enhances thermal conductivity and heat dissipation capabilities while maintaining the structural integrity and mechanical properties of the underfill material.
2Temperature
If the second underfill layer side surface contacts the semiconductor devices and interposer, then structural support is improved, but thermal characteristic differences increase
Solution Approach 1:
The second underfill layer side surface is extracted from direct contact with the semiconductor devices and interposer by positioning it to extend only between the top surface of the interposer and the bottom surfaces of the semiconductor devices. This extraction minimizes thermal characteristic differences at the contact interface while the mold member provides the necessary structural support and mechanical reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly improves the thermal characteristics and mechanical reliability of the semiconductor package by reducing the contact area between the underfill side surface and the molding member, thereby minimizing thermal characteristic differences and enhancing heat dissipation. The use of high thermal conductivity fillers further aids in efficient heat management.
Implementation Method 1
a package underfill layer that includes a first underfill layer in a first gap that is between the plurality of semiconductor devices and a second underfill layer in a second gap that is between the plurality of semiconductor devices and the interposer... the use of high thermal conductivity fillers like boron nitride or silica coated aluminum nitride, enhances thermal management
Data Source
AI summary
A semiconductor package includes an interposer; a plurality of semiconductor devices that are on the interposer and spaced apart from each other; and a package underfill layer that includes a first underfill layer in a first gap that is between the plurality of semiconductor devices and a second underfill layer in a second gap that is between the plurality of semiconductor devices and the interposer, where the second underfill layer includes a second underfill layer side surface that faces a lateral direction, where the second underfill layer side surface does not contact the plurality of semiconductor devices and a portion of the interposer that is adjacent to the second gap, where the second underfill layer side surface extends between a top surface of the interposer and bottom surfaces of the plurality of semiconductor devices and extends from a lower outer boundary.